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Objectives: Simulation of Graphene Nanoribbon band-to-band tunneling FETs

Line Edge Roughness in GNR Tunneling FETs Mathieu Luisier and Gerhard Klimeck APL 94, 223505 (2009). Objectives: Simulation of Graphene Nanoribbon band-to-band tunneling FETs Study the influence of Line Edge Roughness (LER) on their performances. Approach:

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A 3D Atomistic Quantum Simulator for Realistic Carbon Nanotube (CNT) Structures

A 3D Atomistic Quantum Simulator for Realistic Carbon Nanotube (CNT) Structures. Objective: Investigate the electrostatic effect of the 3D environment on 1D channels Investigate atomistic quantum transport in CNT devices Approach:

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