'Channel region' diaporamas de présentation

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chap4- 1. Chapter Goals. Describe operation of MOSFETs and JFETs. Define FET characteristics in operation regions of cutoff, triode and saturation.

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Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chapter Goals. Describe operation of MOSFETs. Define FET characteristics in operation regions of cutoff, triode and saturation.

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Displacement damage studies of power LDMOS devices for DC-DC conversion

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Lecture 21

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Lecture 21

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EXAMPLE 7.1 BJECTIVE Determine the total bias current on an IC due to subthreshold current.

EXAMPLE 7.1 BJECTIVE Determine the total bias current on an IC due to subthreshold current.

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MOSFET Current Voltage Characteristics

Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below). We assume the threshold voltage is constant along the channel. The channel voltage V c has boundary conditions: V c at x=0 =V S =0 and V c at x=L =V DS

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