'Contact resistance' diaporamas de présentation

2011 ITRS Emerging Research Materials [ERM] July 10-13, 2011

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THELMA Analyses of ITER NbTi Cable-in-Conduit Conductors

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Applications of Photovoltaic Technologies

Applications of Photovoltaic Technologies. Referenced website: http://www.udel.edu/igert/pvcdrom/ http://solarpv.itri.org.tw/memb/main.aspx. Why Solar Cells?. Finite fossil fuel supply Less environmental damage No radiation risk (meltdown) Nearly infinite supply of FREE energy

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Spot Welding

Spot Welding. Spot Welding. Learning Activities View Slides; Read Notes, Listen to lecture View Demo Do on-line workbook. Lesson Objectives When you finish this lesson you will understand: Basics of Resistance Welding Processes Heat Generation & Control

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EML 4304L Thermal Fluids Lab Thermal Conduction Experiment # 3

EML 4304L Thermal Fluids Lab Thermal Conduction Experiment # 3. Mechanical Engineering Department FAMU/FSU College of Engineering. Outline. Purpose of the lab Fundamental Equations Unit 3 and Unit 4 Analysis Unit 1 and Unit 2 Analysis Error Analysis. PURPOSE.

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Feature-level Compensation & Control

F LCC. Feature-level Compensation & Control. Process Integration April 5, 2006. A UC Discovery Project. Year 2 Milestones. Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

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Numerical and Hardware-in-the-Loop Simulation of Pantograph-Catenary Interaction

Numerical and Hardware-in-the-Loop Simulation of Pantograph-Catenary Interaction. Stefano Bruni, Giuseppe Bucca, Andra Collina, Alan Facchinetti. Introduction. The assessment of the performance of a given pantograph-catenary system is usually based on line measurements

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??????? Semiconductor Materials and Device Characterization

??????? Semiconductor Materials and Device Characterization Topic 1: resistivity and Four point Probe Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Resistivity: Four point probe. Features: two probes: carry current

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Contact Resistance Measurement Techniques between Metal semi

Contact Resistance Measurement Techniques between Metal and Semiconductor Interface

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Quality Switch TapchangerFunctional Life Tests by Philip J. Hopkinson, PE 2/22/05

Quality Switch TapchangerFunctional Life Tests by Philip J. Hopkinson, PE 2/22/05. Objective: Demonstrate contact stability with de-energized tapchangers in FR3 Fluid

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Surface Phenomena at Metal-Carbon Nanotube Interfaces

Surface Phenomena at Metal-Carbon Nanotube Interfaces. Quoc Ngo Dusan Petranovic Hans Yoong Shoba Krishnan Cary Y. Yang. Back. Outline. Motivation Multi-wall carbon nanotube (MWNT) architectures Mechanisms of contact resistance Characterization of contact resistance

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TCTP impedance

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Regrown Ohmic Contacts to In x Ga 1-x As Approaching the Quantum Conductivity Limit

Device Research Conference, June 19, 2012. Regrown Ohmic Contacts to In x Ga 1-x As Approaching the Quantum Conductivity Limit. Jeremy J. M. Law, a,b Andy D . Carter, a Sanghoon Lee, a Arthur C. Gossard, a,b and Mark J. W. Rodwell a.

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Non-Alloyed Ohmic Contact in HEMTs

Non-Alloyed Ohmic Contact in HEMTs. Introduction Ohmic contacts for HEMTs Non-alloyed ohmic contact technology Summary. 2004. 6. 22. Microwave devices 2003-21577 ? ? ?. Introduction - ohmic contacts. To allow electrical current to flow into or out of the semiconductor

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HDMI cables

HDMI cables. May 2009. http://www.sinotek.biz marketing@sinotek.biz. Basic series. Basic series. up to 15 meters at 1080p resolution Gold-plated contacts to ensure minimum contact resistance Inner rigid overmold and copper foil shield to eliminate interference and lower attenuation

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2011 ITRS Emerging Research Materials [ERM] December 11-14, 2011

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Hexadecimal Keypad

Hexadecimal Keypad. Doug Butterworth Email: epor@psu.edu AIM: Epor55 Phone: 814.217.2466. Hardware Description Internal Organization The Circuit in Action Signal Bouncing. Hardware Description:. 16-Button Numeric Keypad Rugged black plastic

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Back contact materials of CIGS solar cell

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The Integer QHE & Contact Resistance

The Integer QHE & Contact Resistance. Tim Morgan. Outline. Integer Quantum Hall Effect Quantized Current Density Contact Resistance Energy Barrier. 2-D Electron Systems. Inversion Layer. Gate Voltage & Band Bending. E. Landau Levels. E. y. E F. V g. E. E F. Depletion. z.

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Hybrid Approach of Top Down and Bottom Up to Achieve Nanofabrication of Carbon Nanotube Devices

Hybrid Approach of Top Down and Bottom Up to Achieve Nanofabrication of Carbon Nanotube Devices. Maggie Zhang. A Dielectrophoretic Method for High Yield Deposition of Suspended, Individual Carbon Nanotubes with four-Point Electrode Contact.

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