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Dry etching process issues - PowerPoint PPT Presentation

Wafer Fabrication

Wafer Fabrication. CZ processing. k o = C s /C o increases as ingot grows The dopant concentration is given by: I L =I o (1+V s /V o ) ko and C s = -dI L /dV s = C o k o (1-f) ( k o-1). Ingot diameter varies inversely with pull rate:. L = latent heat of fusion N = density

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Wafer Fabrication