'Ecr plasma' diaporamas de présentation

Si Epitaxial Growth on Atomic- Order Nitrided Si(100) Using an ECR Plasma

Si Epitaxial Growth on Atomic- Order Nitrided Si(100) Using an ECR Plasma. Abstract authors: Masaki Mori, Junichi Murota, etc. TohoKu University, Japan Presented by Zhenwei Hou. Research Topic. Atomic-layer doping is necessary to develop future Si-based devices.

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