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An Introduction to VLSI Processor Architecture for GaAS

An Introduction to VLSI Processor Architecture for GaAS. This research has been sponsored by RCA and conducted in collaboration with the RCA Advanced Technology Laboratories, Moorestown, New Jersey. Advantages.

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Figure 13.1 Electromagnetic waves.

1. Figure 13.1 Electromagnetic waves. 13.1 GALLIUM ARSENIDE VERSUS SILICON. 13.1.1 Dielectric-Semiconductor Interface : Enhancement Versus Depletion FETs. Figure 13.2 Comparison of enhancement-type MOSFET and depletion-type FET. 13.1.3 Electron Mobility and Saturation Velocity.

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366 views • 21 slides

VERY HIGH PERFORMANCE LOGIC

VERY HIGH PERFORMANCE LOGIC. Note. Slides on High-Speed Bipolar and Superconduction not yet available. GaAs Design. GaAs Material Properties. GaAs Material Problems. Favored Device: MESFET. MESFET Operation. I-V Characteristic. Curtice Model. GaAs MESFET Model.

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510 views • 20 slides

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