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VTT MICROELECTRONICS 3D RADIATION DETECTORS ORSAY SEPTEMBER 2003. STATUS AS PERFORMER OF RESEARCH AND DEVELOPMENT WORK. Basic research Applied research Development work. Universities. VTT. Industry. VTT IN BRIEF www.vtt.fi. Staff breakdown by location: Oulu 323 Outokumpu 37
Microelectronics User Group Meeting. TWEPP 2009, Paris 22/9/2009. Agenda. 17:30 – 17:45 “Access to ASIC design tools and foundry services at CERN for SLHC” by Kostas Kloukinas (CERN) 17:45 - 17:15
Microelectronics User Group Meeting. TWEPP 2019 2-6, September 2019 Santiago de Compostela, Spain. W ELCOME!. Agenda. “Welcome” by Dr. Kostas Kloukinas (CERN) (5’) “CHIPS: C ERN- H EP I C design P latform and S ervices” by Dr. Kostas Kloukinas (CERN) (15’)
Microelectronics User Group Meeting. Wrap-Up. TWEPP 2012, Oxford, UK 19/9/2012. Agenda. “News on foundry access services via CERN” by Kostas Kloukinas (CERN) (10’) “ 65nm technology: Design tools and foundry access services plans. ”
Microelectronics User Group Meeting. Wrap-Up. TWEPP 2013, Perugia, IT 26/9/2013. Agenda. “News on foundry access services via CERN” by Kostas Kloukinas (CERN) ( 15’ )
Microelectronics User Group Meeting. TWEPP 2010, Aachen , Germany 22/9/2010. Agenda. 16:45 – 17:00 “ASIC design tools and foundry services at CERN” by Kostas Kloukinas (CERN) 17:00 – 17:15
Microelectronics User Group Meeting. TWEPP 2009, Paris 22/9/2009. Agenda. 17:30 – 17:45 “Access to ASIC design tools and foundry services at CERN for SLHC” by Kostas Kloukinas (CERN) 17:45 - 17:15
Microelectronics User Group Meeting. TWEPP 2012, Oxford, UK 19/9/2012. Agenda. “News on foundry access services via CERN” by Kostas Kloukinas (CERN) (10’) “ 65nm technology: Design tools and foundry access services plans. ”
Microelectronics User Group Meeting . TWEPP 2013, Perugia, IT 26/9/2013. Agenda. “News on foundry access services via CERN” by Kostas Kloukinas (CERN) ( 15’ ) “Status of 65nm technology access, distribution and IP block development . ”
Microelectronics & Photonics Technology Group. Design, modeling, processing and characterization of electronic and photonic devices in Si, narrow (GaSb) and/or wide bandgap semiconductors (SiC, GaN) IC interconnect technology and design, including 3D integration, Cu/low-k and optical