'Parasitic resistance' diaporamas de présentation

2001 ITRS Front End Process

2001 ITRS Front End Process. July 18, 2001 San Francisco, CA. FEP Chapter Scope. The scope of the FEP Chapter of the ITRS is to define comprehensive future requirements and identify potential solutions for the key technology areas in front-end-of-line IC wafer fabrication processing.

833 views • 42 slides

1/f noise in devices

1/f noise in devices. 2004-30348 ???. What is the 1/f noise?. A fluctuation in the conductance with a power spectral density proportional to. The cause of 1/f noise. The conductance is

525 views • 23 slides

Transparent Electronics

Transparent Electronics. Submitted by, Sajas K.K. Roll no: 18 S5 EC. Guided by Miss . Shahida. Introduction What is transparent electronics?

995 views • 22 slides

266 views • 16 slides

Impedance Transformation

Impedance Transformation. Resistance of Inductor. R= R sh (L/W) R sh is the sheet resistance Rsh is 22 mOhms per square for W=6um. If the outer diameter is 135 um, the length is approximately 135um x4=540 um. R=22 mOhms x (540/6)=1.98 Ohms.

294 views • 7 slides

Impedance Transformation

Impedance Transformation. Resistance of Inductor. R= R sh (L/W) R sh is the sheet resistance Rsh is 22 mOhms per square for W=6um. If the outer diameter is 135 um, the length is approximately 135um x4=540 um. R=22 mOhms x (540/6)=1.98 Ohms.

141 views • 7 slides

Impedance Transformation

Impedance Transformation. Resistance of Inductor. R= R sh (L/W) R sh is the sheet resistance Rsh is 22 mOhms per square for W=6um. If the outer diameter is 135 um, the length is approximately 135um x4=540 um. R=22 mOhms x (540/6)=1.98 Ohms.

195 views • 7 slides