Resistance drift - PowerPoint PPT Presentation

Tri-Level-Cell Phase Change Memory (PCM): Toward an Efficient and Reliable Memory System

Tri-Level-Cell Phase Change Memory (PCM): Toward an Efficient and Reliable Memory System. Nak Hee Seong Sungkap Yeo Hsien-Hsin S. Lee. School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA 30332 nakhee.seong@gmail.com {sungkap, leehs}@gatech.edu.

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Handling Resistance Drift in Phase Change Memory - Device, Circuit, Architecture, and System Solutions. Manu Awasthi⁺ , Manjunath Shevgoor ⁺, Kshitij Sudan⁺, Rajeev Balasubramonian⁺, Bipin Rajendran ‡ , Viji Srinivasan ‡ ⁺ University of Utah, ‡ IBM Research. Quick Summary.

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204 views • 19 slides

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