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Preparation of films and their growth

Preparation of films and their growth

Preparation of films and their growth. (a) Vacuum evaporation (b) Magnetron sputtering (c) Laser abrasion (d) Molecular beam epitaxy (e) Self-assembled monolayer. E.Bauer, Growth of thin films, J.Phys: Condens. Matter 11(1999)9365. Schematic drawing of the evaporation chamber.

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605 views • 41 slides
Thin Film Processing

Thin Film Processing

Thin Film Processing. Gary Mankey MINT Center and Department of Physics http://bama.ua.edu/~gmankey/ gmankey@mint.ua.edu. Vacuum. Vacuum. A vacuum is defined as less than 1 Atmosphere of pressure. 1 Atm = 10 5 Pa = 10 3 mbar = 760 Torr

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772 views • 24 slides
MBE GROWTH AND INSTRUMENTATION

MBE GROWTH AND INSTRUMENTATION

MBE GROWTH AND INSTRUMENTATION. Thesis Proposal Outline for the Degree of Master of Science Major Professor Dr. Terry Golding Ph.D, University of North Texas. MBE GROWTH AND INSTRUMENTATION. MBE growth. RHEED. Research Method. References. MBE Growth. Introduction.

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280 views • 17 slides
MBE GROWTH AND INSTRUMENTATION

MBE GROWTH AND INSTRUMENTATION

MBE GROWTH AND INSTRUMENTATION. Thesis Proposal Outline for the Degree of Master of Science Major Professor Dr. Terry Golding Ph.D, University of North Texas. MBE GROWTH AND INSTRUMENTATION. MBE growth. RHEED. Research Method. References. MBE Growth. Introduction.

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417 views • 17 slides
Molecular Beam Epitaxy

Molecular Beam Epitaxy

Molecular Beam Epitaxy. 09/26/2008 MSE 576: Thin Films. Deepak Rajput. Graduate Research Assistant Center for Laser Applications Materials Science & Engineering University of Tennessee Space Institute Tullahoma, Tennessee 37388-9700 Email: drajput@utsi.edu Web: http://drajput.com.

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1.28k views • 16 slides
Si Epitaxial Growth on Atomic- Order Nitrided Si(100) Using an ECR Plasma

Si Epitaxial Growth on Atomic- Order Nitrided Si(100) Using an ECR Plasma

Si Epitaxial Growth on Atomic- Order Nitrided Si(100) Using an ECR Plasma. Abstract authors: Masaki Mori, Junichi Murota, etc. TohoKu University, Japan Presented by Zhenwei Hou. Research Topic. Atomic-layer doping is necessary to develop future Si-based devices.

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MS2041_01 Introduction to crystal structures and diffraction theory ?? ????

MS2041_01 Introduction to crystal structures and diffraction theory ?? ????

MS2041_01 Introduction to crystal structures and diffraction theory ?? ????. MSE, National Tsing Hua University Fall semester 9/2015-1/2016 Instructor: Prof. Cho-Jen Tsai Office hours: By appointment (TEL: 33831 or cjtsai@mx.nthu.edu.tw ) Time : W3W4F3F4 Classroom: ?? B105.

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272 views • 7 slides

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