'Saser device' diaporamas de présentation

School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK .

Electrically pumped terahertz SASER device using a weakly coupled AlAs/GaAs superlattice as the gain medium. 0.5 m m n + (2 x 10 24 m -3 ) layer. 20 nm undoped GaAs spacer. (21 ML GaAs/14 ML AlAs) x 50. Gain SL. 2.9 m m. Uniformly Doped (2 x 10 22 m -3 ).

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