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First Principles Studies on High-k Oxides and Their Interfaces with Silicon and Metal Gate

First Principles Studies on High-k Oxides and Their Interfaces with Silicon and Metal Gate. Feng Yuan Ping ( ??? ) Department of Physics National University of Singapore phyfyp@nus.edu.sg. www.mrs.org.sg. G. S. D. Outline. Introduction Oxygen vacancy in HfO 2 and La 2 Hf 2 O 7

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