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Tri-Valued Memory Circuit Using MOS-BJT-NDR Circuits Fabricated by Standard SiGe Process

Japanese Journal of Applied Physics Vol. 45,No. 36, 2006, pp.L977-L979. Tri-Valued Memory Circuit Using MOS-BJT-NDR Circuits Fabricated by Standard SiGe Process. Kun Shan University. Department of Electronic Engineering. Advisor ? Kwang-Jow Gan. Student ? Chun-Min Wen. Abstract

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Tri-Valued Memory Circuit Using MOS-BJT-NDR Circuits Fabricated by Standard SiGe Process