'Sih 4' diaporamas de présentation

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Lecture 12.0

Lecture 12.0. Deposition. Materials Deposited. Dielectrics SiO2, BSG Metals W, Cu, Al Semiconductors Poly silicon (doped) Barrier Layers Nitrides (TaN, TiN), Silicides (WSi 2 , TaSi 2 , CoSi, MoSi 2 ). Deposition Methods. Growth of an oxidation layer Spin on Layer

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Alan Gallagher JILA, University of Colorado and National Institute of Standards and Technology

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CH10. Hydrogen

CH10. Hydrogen. Preparation. Historic preparation: metal + acid ? H 2 + M x+ Lab preparation: 2Fe + 6HCl ? 2FeCl 3 + 3H 2 Zn ? Zn 2+ E ? = +0.76V Fe ? Fe 3+ +0.04 Cu ? Cu 2+ -0.34 Industrial preparation

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CH10. Hydrogen

CH10. Hydrogen. Preparation. Historic preparation: metal + acid ? H 2 + M x+ Lab preparation: 2Fe + 6HCl ? 2FeCl 3 + 3H 2 Zn ? Zn 2+ E ? = +0.76V Fe ? Fe 3+ +0.04 Cu ? Cu 2+ -0.34 Industrial preparation

522 views • 24 slides

Surface micromachining

Surface micromachining. How a cantilever is made:. http://www.darpa.mil/mto/mems. Sacrificial material : Silicon oxide Structural material : polycrystalline Si (poly-Si) Isolating material (electrical/thermal): Silicon Nitride. Silicon oxide deposition. SiH 4 + O 2.

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Surface micromachining

Surface micromachining. How a cantilever is made:. http://www.darpa.mil/mto/mems. Sacrificial material : Silicon oxide Structural material : polycrystalline Si (poly-Si) Isolating material (electrical/thermal): Silicon Nitride. Silicon oxide deposition. SiH 4 + O 2.

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CAPACITIVELY COUPLED RF PLASMAS FOR THE SYNTHESIS OF SILICON NANOCRYSTALS*

CAPACITIVELY COUPLED RF PLASMAS FOR THE SYNTHESIS OF SILICON NANOCRYSTALS*. R. Le Picard 1 , A.H. Markosyan 2 , D.H. Porter 3 , M.J. Kushner 2 , S.L. Girshick 1 1 Univ. of Minnesota, Dept. Mech. Engr., Minneapolis, MN USA 2 Univ. of Michigan , Electrical & Comp. Engr., Ann Arbor, MI USA

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O. Degtyareva et al., PRB 76, 064132 (2007).

Structural Determination of Solid SiH 4 at High Pressure Russell J. Hemley (Carnegie Institution of Washington) DMR 0508988.

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Compressive

AlGaN:Si. SiH 4. AlGaN. Tensile. _. g. m=6.5 GPa/ m m. 1120. 250 nm. Compressive. Stress gradient in AlGaN:Si induced by dislocation bending Joan M. Redwing, Penn State University, DMR 0606451.

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