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Superconductive Magnetoresistive Random-Access Memory (JMRAM)

Superconductive Magnetoresistive Random-Access Memory (JMRAM). By Charles Nathan Cardinell Mentor Nathan Newman. Objective. To create a RAM that requires very little power Resistive to Radiation Damage Fast Switching. Memory Comparision. JMRAM has a faster read/write time

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Rutherford Backscattering Calibration

Rutherford Backscattering Calibration. 40 nm LaAlO 3. 50 nm SrTiO 3. MgO Substrate. Kedrick Vaughans 1 and Maitri Warusawithana 2 1 The University of Alabama, College of Arts and Sciences, Department of Physics. Mg (substrate) edge moved to lower energies by SrTiO 3 layer.

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224 views • 1 slides

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