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V 2 O and V 3 O DEFECTS IN SILICON: FTIR STUDIES

V 2 O and V 3 O DEFECTS IN SILICON: FTIR STUDIES. Leonid Murin 1,2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials Science and Nanotechnology, Oslo, Norway. OUTLINE. What we know

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V 2 O and V 3 O DEFECTS IN SILICON: FTIR STUDIES