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V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine

V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. Athens, 11 April 2008. ISP was established in 1960. The staff of our Institute includes now 785 employee s : ▪ 2 Academician s ▪ 9 Corresponding Members of NASU

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V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine

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  1. V. Lashkaryov Institute of Semiconductor Physics NationalAcademy of Sciences of Ukraine Athens, 11 April 2008

  2. ISP was established in 1960 The staff of our Institute includes now 785 employees: ▪2 Academicians ▪9 Corresponding Members of NASU ▪88 Doctors of Sciences (Habilitated) ▪204 Candidates of Sciences (Ph.D.)

  3. The areas of fundamental investigations and scientific-technical works ▪physics of semiconductors and semiconductor devices; ▪ semiconductor materials science; ▪ optics and spectroscopy; ▪ optoelectronics; ▪ sensorics; ▪ diagnostics and certification of semiconductor materials; ▪ infrared photoelectronics; ▪ liquid-crystal and electroluminescence facilities for displays; ▪ high-temperature electronics; ▪ semiconductor solar power engineering

  4. 6 Multichannel Optical RotatingConnector 7 5 1 3 4 2 9 8 10 Applications: ▪ in optical communication systems with rotating components ▪ radar antenna equipment ▪ wide angle azimuth field of view scanning systems in visible and IR Designed for the non-contacting transferring of broadband digital signals to and from a rotating body

  5. Solar cells for ground-based portable electronic facilities and mobile communications

  6. Technologicalsystem for helio-welding Parameters of solar battery Open-circuit voltage, V 40,0 Short-circuit current, A 5,5 Operating voltage, V36,0 Operating current, A5,0 Peak power, W 180 Weight (together with orientation system), kg 20 Number of solar battery modules 10 Coefficient of module efficiency, % 12-14

  7. GERMANIUM RESISTANCE THERMOMETERS FOR CRYOGENIC TEMPERATURES

  8. Diode Temperature Sensors DTS-100 Diode Temperature Sensors DTS-1 The sensors have provide most reliable and accurate measurements for the objects, which are operating under extreme conditions Minimized influence of self-heating and noise, enhanced sensitivity in low temperature range, accuracy and reproducibility.

  9. Powder electroluminescent indicators • Average brightness is 50-60 Candle/m2 at 150V and 400 Hz • Based on screen printing and roll technology • Price ~ 50-80$/m2

  10. Semiconductor silicon carbide technology This technology provides amorphous and polycrystalline silicon carbide with grain sizes from 0.02 up to 5 mm. The main impurity is nitrogen with the concentration <1017 cm-3. The basic application is a source of materials for growing single crystals

  11. SiC

  12. INFRARED IMAGER The portable infrared imager is designed for detection of thermal (infrared) radiation, subsequent processing of the signal and its real-time visualization on the built-in LCD display or external monitor. Inflammation Blood circulation Contactless and intrusionless detection of inflammations, blood circulation anomalies and other pathologies, particularly in oncology (breast cancer, thyroid gland cancer), traumatology, gynaecology, post-operation complications control.

  13. Ecological monitoring and nondestructive control: Detection of thermal losses of buildings, pipelines, monitoring of moving engine parts, control of fire-risk areas, etc.

  14. C-AFM Fluid cell SCM Force modulation STM NanoIndentor AFM Qadrexed Dimension 3000 NanoScope IIIa Scanning probe microscope Nanosensors for various methods of tip spectroscopy: C-AFM –conducting AFM; SCM – scanning capacitance m; Fluid c.- for study of fluids, STM – scanning tunelling m.; Force modulation – for the mapping of surface elastic properties

  15. Examples of nanoindentor functioning

  16. Thank you for your attention

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