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R&D status of a large HAPD

R&D status of a large HAPD. T. Abe, H. Aihara, M. Iwasaki, H. Nakayama, T. Uchida (Univ. of Tokyo) M. Tanaka, (KEK) Y. Kawai, H. Kyushima, M. Suyama (HPK) M. Shiozawa (ICRR). Introduction.

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R&D status of a large HAPD

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  1. R&D status of a large HAPD T. Abe, H. Aihara, M. Iwasaki, H. Nakayama, T. Uchida (Univ. of Tokyo) M. Tanaka, (KEK) Y. Kawai, H. Kyushima, M. Suyama (HPK) M. Shiozawa (ICRR)

  2. Introduction • We believe HAPD is the photon detector for the next generation water-Cherenkov detector (i.e. Hyper Kamiokande, 2km detector for T2K). • We have developed large (13-inch) HAPD. • In this talk, we present the R&D status of the HAPD.

  3. Hyper Kamiokande 20 times larger than Super K 48m×50m×250m×2 Total mass ~ 1Mton • Low cost • Quality control • Single photon sensitivity • Good time resolution

  4. HAPD HAPD uses avalanche diode as e multiplier. # of parts < 1/10 of PMT

  5. 190ps σ Theme • Excellent HAPD performance than PMT’s • Single photon sensitivity • Single photon time resolution ~ 190ps (s) • Readout system development dedicated for HAPD • Possible application to other field

  6. Bombardment: x4500@20kV Ne/sNe=67 Avalanche Gain: X30 Total Gain:~105 Principle of HAPD Operation HAPD PMT 1st Dynode Gain: x5 Ne/sNe=2.2 Incident Light Incident Light Photoelectron Photoelectron Large gain @ 1st mult. stage  good single photon detection 10~20kV Dynodes Avalanche Diode No Dynodes (No TTS)  large HAPD with good time resolution Total Gain:~107 Total Gain:~105

  7. Property of HAPD • Single photon sensitivity large gain at the first stage of multiplication • Good time resolution No TTS in dynodes • Cost reduction and easy Quality control simple structure without dynodes • Lower gain Need a dedicated readout system

  8. t f HAPD system (Q, T) QP.H. TTime ≥1Gsps MOF 13-inch HAPD Pre-amplifier ASIC (Low noise) Waveform sampling (Fast sampling) +Digital filter (Noise Suppression) HAPD performances are evaluated using this system

  9. 13inch HPD performances • Energy measurement related items • Comparison between HAPD and PMT • Dynamic range • Position dependence of relative gain • Timing measurement related items • Comparison & # of P.E. dependence • HV dependence • Dark rate

  10. HPD and PMT 1P.E. 2P.E. 3P.E. 4P.E. 1P.E. 5P.E. 2P.E.(?) HPD（HV=12ｋV bias=330V) PMT(13inch)

  11. :Sample A :Sample B :Sample C Dynamic range (no preamplifier) 3000p.e. equivalent input 110 HV=+20kV, Bias=290V for Sample A 370V for Sample B 390V for Sample C Light Source: Pulsed Laser (PW: ~70ps, λ: ~400nm) 100 90 80 Output/input [%] 70 60 -3% Deviation at Output Charge of 100pC (~3000p.e. input signal intensity equivalent at total gain of ~2x105) 50 40 1 10 100 1000 Output Charge [pC]

  12. 18cm ~65deg. Position dependence of gain for photons<5 Gain uniformity:s~2%

  13. 45 deg 70 deg Time resolution (large HAPD) Time resolution = Transit time variation Timing resolution Center

  14. Timing resolution Spot Laser illuminated HV=12ｋV bias=330V Better st No dependence of # of p.e. 190ps

  15. Photoelectron transit time Center Bias=290V Light Source: Pulsed Laser (PW: ~70ps, λ: ~400nm) 45 deg 70 deg Position dep. of Transit time < 1 nsec

  16. Dark rate Dark rate quickly goes down below ~17 kV. Sample#1 20inch PMT dark rate @ room temp Sample#2 After modification of HPD, Dark rate HPD@20kV~20inch PMT Dark count : 15kHz HAPD

  17. HAPD vs. PMT

  18. Under development f FPGA 1Gsps AMC t Pre-amplifier ASIC Analog memory cell (AMC) + FPGA for Digital Filter f HPD electronics status (Q, T) ≥1Gsps MOF

  19. ASIC preamplifier for low noise

  20. ENC (noise) and impulse response Rise time=5.8ns Dynamic range:2V Power consumption:~4mW/ch (depends on driving capability) S/N=59 for the HAPD gain of 2X105

  21. Achievable ENC Quadruple input transistor amplifier Detector Capacitance=40pF S/N=2X105/2.2X103 S/N~100 is attainable!?

  22. AMC + slow FADC vs. fast FADC Ref. ; A. Kusaka Master Thesis 2004 U. of Tokyo

  23. AMC operation principle

  24. Output (with 100kHz Readout Clock) Test Signal Input ~12counts under 1ns sampling period 100us/Div. ~10ns 5ns/Div. AMC pulse response test Sample and Hold Trigger Readout Clock: Much Slower Than Sampling Speed Prototype AMC

  25. AMC performance (measured) • Sampling speed=1GHz • Uniformity of sampling speed < 100psec • Dynamic range : 3.5V • 9bit equivalent resolution • 50mW/ch Depth 64 AMC

  26. Depth 512 AMC • We develop a depth 512 AMC which has enough depth to measure entire signal shape of HAPD. 512nsec

  27. FPGA for DSP • So far, we evaluate this part using • Offline computer analysis or • Mathlab/Simulink + Signal Master (general purpose DSP prototyping hardware) • We start to design a FPGA board dedicated for Digital Signal Processing with Giga-bit Ethernet output.

  28. Possible application to other fields • We are seeking possible HAPD application to other fields. • Excellent single photon sensitivity of HAPD might be useful for environment science. • We try to measure photons from photo protein (single photon events).

  29. Filter output of photo protein events The origin of photon source is same as fireflies. 40msec

  30. Photon measurement from photo protein Large HAPD can measure single photon events by photo protein source. noise signals

  31. Summary • We develop a 13inch HAPD and confirm • Excellent single photon st~190ps. • Excellent single photon sE~44%. • Total gain of > 2X105. • We develop a dedicated readout electronics for the HAPD. • HAPD would be useful for other fields.

  32. Backup slides

  33. HPD system in the next step • In the next step (after several modifications) • Stability for temperature (for general purpose) • Evaluation of long term stability • Optimization of manufacturing process for production cost • Photocathode formation • Low cost material • Quality check during production …. • Customization of electronics/system for HK Multi-SK Large-SK HK

  34. t t MOF MOF 1Gsps AMC 1Gsps AMC f f Two directions • Similar to SK • On HPD Digital data through Ethernet Ethernet Development of common devices After determination of timing I/F(i.e. trigger, clock ..) Multi-chip module or deep submicron ASIC (blue rectangle part) will be developed as a building block of the readout system.

  35. EB and Avalanche Gain AD Bias=30V(fixed), HV=Swept HV=+10kV(fixed), Bias=Swept Gain=~4700 @20kV Gain=~50 @390V

  36. Incorporated Avalanche Diode and its C-V Characteristics Capacitance: ~40pF over bias voltage of 120V (assembled on the base) Assembled Bare Chip Backside Illumination Avalanche Diode Effective Area: 5mm in dia.

  37. Photoelectron Collection Efficiency and Effect of Magnetic Field (Simulation) Photoelectron Collection Efficiency as a function of HV (No Magnetic Field) Collection Efficiency as a function of Magnetic Field (at HV of +20kV)

  38. Mathlab/Simulink + SignalMaster

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