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Mother Board

Mother Board. Motherboard. M/B Power Map M/B 常用電路 CPU Vcore 電源設計 MOSFET 的功率損耗 M/B Power Solution. ATX 12V POWER SUPPLY. 3.3V 5V 5VSB 12V. PROCESSOR Core & Vtt (0.8375v~1.6v) VID (1.2v). VRM. VID VREG. 1.5V VREG. GMCH Core (1.5v)/Agp (1.5v) Vtt DDR System Memory (2.5v).

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Mother Board

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  1. Mother Board

  2. Motherboard • M/B Power Map • M/B常用電路 • CPU Vcore電源設計 • MOSFET的功率損耗 • M/B Power Solution

  3. ATX 12V POWER SUPPLY 3.3V 5V 5VSB 12V • PROCESSOR • Core & Vtt (0.8375v~1.6v) • VID (1.2v) VRM VID VREG 1.5V VREG • GMCH • Core (1.5v)/Agp (1.5v) • Vtt • DDR System Memory (2.5v) 2.5V VREG • DDR System Memory (2.5v) • DDR Vtt (1.25v) 2.5V VREG 1.25V VREG • ICH5R • Ich5r Core (1.5v) • Ich5r I/O (1.5V) • Ich5r Resume (1.5v) • Ich5r Resume I/O (3.3v)/ • Ich5r Rtc (3.3v) • Ich5r (3.3v) 1.5VSB 3.3V VREG 3.3V VSB M/B Power Map

  4. 降壓轉換器 ( Step Down Regulator ) 線性轉換器 ( Linear Regulator ) 切換式的轉換器 ( Buck Regulator ) 圖(一) 圖(二) M/B常用電路

  5. 目前使用 Vcore PWM 有 On Semiconductor, Intersil, Semtech • Analog Devices 等等. • 多相式電源轉換是現階段CPU 電源主流方案 MOSFET 的功率損耗 一般區分兩大類: 1.導通損耗 (conduction losses) 2.切換損耗 (switching losses) 選用MOSFET要求條件: a. 低導通內阻 (low-rds-on) b. 低輸入電容 (low- gate-charge) c. 工作電壓,電流須在規格內 圖三.Typical Application CPU Vcore電源設計

  6. 切換損耗 導通損耗 1.導通損耗 (Conduction Losses) MOSFET 本身之導通內阻(Rds_on) , 在同步降壓(buck)電路中, 導通損 耗與MOSFET導通時間 (D, duty Cycle) 有關, 導通損耗等式如下 : Phi_side_on = IOUT2 *Rds_on * D Plow_side_on = IOUT2 *Rds_on* (1-D) VDS CURRENT ( A ) 2.切換損耗 (switching losses) MISFET Turn On/Off 切換, Vds 與 Id 重疊產生功率損耗, 其值由輸入電壓, 輸出負載電流及切換頻頻決定, 同步降壓 (buck)電路中, 切換損耗等式如下 : Phi_side_sw = Iout * Vin * Ton * F/2 + Cds * Vin2 * F/2 Plow_side_sw = Iout * Vin * Ton * F/2 ID VGS T0 T1 T2 T3 T4 ( TIME ) MOSFET的功率損耗 VOLTAGE ( V ) VOLTAGE ( V )

  7. 1. Function <1> Vcore : 在此場合, MOSFET是當同步整流, 用以將+12V的電源轉換成+0.85V 至+1.60V給 CPU 用, PWM IC 約操作在 180KHz 以上, 對於 Rds, Qg, Tr, Tf 很在乎, 故需使用 Rds, Qg, Tr, Tf 皆小的, 若依包裝選擇 可以建議使用 CET以下幾種的搭配組合. TO-252 : CEU63A3 (High side), CEU85A3 (Low side) CEU75A3 (High side) , CEU85A3 (Low side) TO-263 : CEB63A3 (High side), CEB85A3 (Low side) CEB75A3 (High side), CEB85A3 (Low side) M/B Power Solution (1)

  8. M/B Power Solution (1) ASUS M/B Vcore

  9. M/B Power Solution (1) ASUS M/B Vcore Temperature compare

  10. M/B Power Solution (1)

  11. M/B Power Solution (1) ASUS M/B Vcore Efficiency compare

  12. M/B Power Solution (1)

  13. M/B Power Solution (2) <2> DDR : 在此場合MOSFET若是以 Linear regulator的方式設計, 將+3.3V的 電源轉換成+2.5V及+1.25V給 DDR用, 對於 Qg則較不在乎. 但若是 以同步整流的方式設計, 則 Rds, Qg, Tr, Tf 皆需選擇較小的. 依包裝 選擇可以使用 CET以下幾種產品. TO-252 : CEU3055LA, CEU21A3, CEU603AL, CEU61A3 CEU51A3 TO-263 : CEB21A3, CEB603AL, CEB61A3, CEB51A3, CEB703AL

  14. M/B Power Solution (3) <3> USB : 主要當+5V Power 的開關, 應用上較在乎 Rds(on), 所以在此應用場合] 可以使用 CET 以下的MOSFET. SO-8 : CEM2030, CEM4501, CEM8401A, CEM9939A, CEM8938 CEM2939 TO-252 : CEU21A3, CEU603AL, ,CEU51A3

  15. M/B Power Solution (4) <4> AGP : 在此場合是作 Linear regulator 將+3.3V的電源轉換成+1.8V及+1.5V 給 VGA 用, CET適合的MOSFET若依包裝, 有以下幾種. TO-252 : CEU3055LA, CEU21A3, CEU603AL, CEU61A3 TO-263 : CEB21A3, CEB603AL, CEB703AL,CEP61A3

  16. M/B Power Solution (4) <5> PCI Express : 在此場合是提供+12v及+3.3V的電源,再轉換成+5V,+3.3V , +2.5V,+1.8V,+1.5V 給 VGA 使用. CET適合的MOSFET若依包裝, 有以下幾種. TO-252 : CEU3055LA, CEU21A3, CEU603AL, CEU61A3 CEU75A3,CEU85A3 TO-263 : CEB21A3, CEB603AL, CEB703AL,CEB75A3 SOT-23: CES2312,CES2324,CES2302

  17. M/B Power Solution (5) 2. CET MOSFET selection guide

  18. M/B Power Solution (6)

  19. THANK YOU !

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