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Department of Electronic Engineering The Chinese University of Hong Kong

Photonics Activities within Solid State Lab. a) Sensors for Biomedical Applications b) Electroluminescence of FeSi 2 in Si c) Polymer Light Emitting Diodes. Department of Electronic Engineering The Chinese University of Hong Kong.

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Department of Electronic Engineering The Chinese University of Hong Kong

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  1. Photonics Activities within Solid State Lab a) Sensors for Biomedical Applicationsb) Electroluminescence of FeSi2 in Sic) Polymer Light Emitting Diodes Department of Electronic Engineering The Chinese University of Hong Kong

  2. EE – optoelectronics, guided-wave devices, biomedical electronics, signal processing, device fabrication Biochemistry and Medicine – application area identification, supporting facilities, biomolecule selection, bio-material supply, field trials Academic units & industrial partners in support of photonic sensor R&D in CUHK Photonic Sensor R&D ACAE – Centre for Micro and Nano Systems, MEMS, micro-fluidics, device modeling Physics – laser optics, optical diagnostic facilities, novel materials • E-Care Company Ltd. (wireless healthcare devices) • Automatic Mfg. Ltd. (high volume device manufacturing) • Photonics Instruments (equipment R&D) • Hong Kong Healthcare Services Ltd. (sales and marketing) • Hong Kong Health Digit Co. Ltd. (diagnostic equipment) • Chan & Hau Medical Laboratories (medical services) Industrial Partners

  3. Micro-Photonic Sensors for Biomedical Applications CUHK’s photonics technologies and techniques Surface Plasmon Resonance, Integrated Optics(Prof. Aaron Ho, EE) Optical Fibre Phosphorescence (Prof. Dennis Lo, Phys) Biomolecules to be detected Application Examples: Health care diagnostics Environmental monitoring Food and drink industries Drug R&D Agriculture Antigen/antibody Oxygen Toxins Carcinogens body fluids/blood/urine DNA, genomic fingerprints Virus, cells, bacteria Pollutants Food ingredients

  4. k sp Surface Plasmon Wave Metal q Lowest Reflectivity Surface Plasmon Resonance Biosensors

  5. Differential Phase SPR Sensor

  6. 200 BSA Antibody into flow cell =>specific binding Non-BSA Antibody 150 110ug/ml Into flow cell =>No binding 100 differential phase (degrees) 37ug/ml PBS 50 PBS 3.7ug/ml 0 -50 0 50 100 150 200 250 300 350 400 450 time (sec.) Biomolecule detection response curve Reaction curve of BSA (bovine serum albumin)with non-BSA antibody with different concentrations of BSA antibody

  7. Phase change caused by varying concentration of glycerin/water mixture (Au surface) 160 140 120 100 Relative phase change (degree) 80 60 40 20 0 0 2 4 6 8 10 Concentration of glycerin (%) Sensitivity limit of our SPR system Time (min) Sensitivity limit of our system: Au surface: 1.38 x 10-7 RIU (Refractive Index Unit) Au/Ag surface: 5.48 x 10-8 RIU

  8. Sensitivity Comparison Between Systems Sensitivity limit of our system: Au surface: 1.38 x 10-7 RIU (Refractive Index Unit) Au/Ag surface: 5.48 x 10-8 RIU

  9. - + + SiO2 2 nm ITO 0.5μm 2μm Al 20000 High strain w) low strain m p+ Si FeSi2 FZ n-Si 15000 PL Intensity ( 10000 bias+ 5000 0 0.7 0.8 0.9 1.0 1.1 1.2 Photo energy (eV) Structural and optical properties of FeSi2 nano-crystal embedded in Si synthesized by MEVVA implantation PL spectra measured at 80K for two samples with different strain states. A simple structure of LED device containing FeSi2 nano-crystal

  10. Application of Low Level Birefringence Detection System for Stress Measurement in Semiconductor Materials and Structures Photoelasticity (PE) method for stress analysis By measuring the change in the state of polarization of light after passing through the sample, information on the stresses in the sample can be obtained Low Level Birefringence Detection (LLBD) system A high sensitive PE technique by using Photoelastic Modulation technique. The sensitivity of current LLBD system is: 0.02º

  11. Unit:  107 dyne/cm2 (11 0) Distribution of residual stress in the 2- inch bare (100) GaAs wafer Application of Low Level Birefringence Detection System for Stress Measurement in Semiconductor Materials and Structures tS iO2= 1.3 m tSi = 380 m SiO2 0 x Si y Plot of distribution of stress induced birefringence in silicon substrate under SiO2 film edge

  12. OLED project team members Project Director: Prof. K. Y. Wong Dept. of Physics Prof. H. F. Chow Dept. of Chemistry Prof. S. K. Hark Dept. of Physics Prof. W. M. Lau Dept. of Physics Prof. H. C. Ong Dept. of Physics Dr. K. W. Wong Dept. of Physics Prof. S. P. Wong Dept. of Electronic Engineering Prof. J. B. Xu Dept. of Electronic Engineering

  13. CUHK’s areas of interest in PLED • Comprehensive in-house material characterization facilities (Physics and EE Depts.) to conduct research on: a) Interface characterization and engineering b) Degradation mechanisms and improvement • Development of new materials (Chemistry Dept.) • Device fabrication and technology transfer through collaboration with industry (Varitronix) and other local institutions (HKUST, HKBU) • ITF project in collaboration with Varitronix Ltd. (HK $ 4M)

  14. Existing facility for PLED preparation and characterization XPS, Auger, STM/AFM, SEM, TEM/EELS

  15. PLEDs fabricated “Green” PLED cell based on PFO co-polymer from DOW Chemicals “Blue” PLED cell based on PFO from Prof. H. F. Chow

  16. END

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