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2009 Interconnect Working Group Update: Key Topics and Innovations in Interconnect Technology

This document outlines the significant findings and updates from the Interconnect Working Group meeting held on December 16, 2009, in Hsinchu, Taiwan. Chaired by Christopher Case, it covers essential topics such as requirements from device function, advancements in low-k materials, challenges in reliability improvements, and the introduction of new materials aimed at overcoming performance barriers. Additional discussions include a roadmap for 3D TSV technology, categorization of emerging interconnects, and the implications of Cu extension and replacement strategies for future semiconductor technologies.

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2009 Interconnect Working Group Update: Key Topics and Innovations in Interconnect Technology

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  1. Interconnect Working Group 2009 Revision 16 December 2009 Hsinchu, Taiwan Christopher Case, Chair Raymond Jao(SPIL), Jinn-P. Chu (NTUST), Hsien-Wei Chen (TSMC), and Sam Yamazaki (Sharp)

  2. Topics of 2009 Interconnect Update • Outline renewal • Requirements from device function, and solution by process modules • Small change in bulk low-k • No change in keff • Accelerating Air-gap • Reliability improvement challenge • Metal capping for EM resistance booster. • Red brick wall decline inJmax, new material’s introducing • New 3D TSV roadmap tables • Emerging interconnect categorization for Cu extension and Cu replacement

  3. Topics of XTWGs in Hsinchu • More Moore related issues • Very Low-k (k<2.1) with 450mm wafer • Cu contact for 2011 revision • TSV impacts for etching chemical consumption, in-situ test and metrology methods with void inside, and layout rules. • More than Moore related issues • Border for Cu Extension/Replacement and Native device interconnect with ERM.

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