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Cell-Based Aerial Image Analysis of Design Style for 45nm Generation Logic

3. Design Styles / Design Space. 1. Introduction. The figure below shows the three design styles studied, over a design space covering 90, 65, and 45nm technology nodes. For each style and node, the patterns were imaged both with and without OPC.

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Cell-Based Aerial Image Analysis of Design Style for 45nm Generation Logic

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  1. 3. Design Styles / Design Space 1. Introduction The figure below shows the three design styles studied, over a design space covering 90, 65, and 45nm technology nodes. For each style and node, the patterns were imaged both with and without OPC. The regular patterns “a” through “f” were designed with width/space of 65/65nm, 90/90nm, and 120/120nm corresponding to 45nm, 65nm, and 90nm logic technology nodes. As IC dimensions shrink faster than exposure tool numerical aperture increases, the k1 value in the lithographers equation decreases. Since increasing k1 with higher NA is expensive, other alternatives are needed. OPC is often used to improve image quality for a fixed NA, but it’s not perfect. Design style is another alternative to improve pattern fidelity for a given NA. In this study, we have evaluated regular 1-D patterns, regular 2-D patterns, and irregular 2-D patterns. Our results show that regular patterns have better pattern fidelity. 90 OPC 65 OPC 45 OPC 90 RAW 65 RAW 45 RAW a b c d e f g h Style D: 90 / 65 / 45nm Style A: 90 / 65 / 45nm OPC No OPC Style E: 90 / 65 / 45nm OPC No OPC Style B: 90 / 65 / 45nm OPC No OPC Style F: 90 / 65 / 45nm OPC No OPC Style C: 90 / 65 / 45nm Style G: 90 / 65 / 45nm OPC No OPC Style H: 90 / 65 / 45nm OPC No OPC OPC No OPC OPC No OPC Cell-Based Aerial Image Analysis of Design Style for 45nm Generation Logic 2. Simulation Advanced numerical models (SEQUOIA Design Systems’ Cell Designer) capture 90/65/45nm effects including high NA and vector diffraction, polarization, aberrations, etc. Automatic optimization algorithms used to calibrate simulation models to match SEM data, predictive accuracy is achieved. Effects design styles and OPC evaluated by simulation and SEM. 4. Experimental Results Michael C. Smayling1, Valery Axelrad2, Michael P. Duane1, James Yu1, Hui W. Chen11Applied Materials, Inc., 2Sequoia Design Systems Aerial image Entrance pupil illumination Simulation Simulation SEM Measurement locations for calibration The litho process stability at 65nm Calibrated simulation

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