Enhancing Light Output Power in Thick Well Short-Period InGaN/GaN MQW LEDs
This study investigates the configuration of InGaN/GaN multi-quantum wells (MQWs) and its impact on the internal quantum efficiency (IQE) of LEDs. We explore how electron concentration and uniform distribution across quantum wells influence light output power. Our focus is on thick well short-period MQW LEDs with thickness-fluctuated InGaN wells, examining their electrical and optical properties and the fabrication process. Key factors include the chip size and layer composition, aiming to achieve significant improvements in GaN-based LED performance.
Enhancing Light Output Power in Thick Well Short-Period InGaN/GaN MQW LEDs
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Presentation Transcript
Introduction • The configuration of InGaN/GaN MQWs plays a key role in the internal quantum efficiency(IQE) of LEDs. • In the MQW, the carriers must effectively increase the concentration and uniformly spread across all quantum wells to improve the IQE. • In this study, we aimed to demonstrate the light output power enhancement of thick well short-period MQW LEDs with thickness-fluctuated InGaN well. • The effects of thick well short-period InGaN/GaN MQW LEDs with thickness-fluctuated InGaN well on the electrical and optical properties of GaN-based LEDs, as well as the fabrication process, are discussed.
Experiments Chip size : 230 * 440μm2 p- pad ITO Mg-doped p-GaN 100 nm Mg-doped AlGaN 20 nm InGaN/GaN MQW 20 periods 1.3/1.8 nm InGaN/GaNsuperlattices n- pad 2 μm Si-doped n-GaN un-GaN 2 μm 1050 GaN nucleation layer 30 nm 560 c-plane sapphire
