1 / 16

Compact (72mm x 72mm x 50mm) Lightweight Fully vacuum compatible 4096 x 4096 maximum CCD format

Camera CCD in sviluppo all’XUVLab per un esperimento su razzo, precursore dell’esperimento UVC del Solar Orbiter. Compact (72mm x 72mm x 50mm) Lightweight Fully vacuum compatible 4096 x 4096 maximum CCD format Three-stage Peltier cooler

Télécharger la présentation

Compact (72mm x 72mm x 50mm) Lightweight Fully vacuum compatible 4096 x 4096 maximum CCD format

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Camera CCD in sviluppo all’XUVLab per un esperimento su razzo, precursore dell’esperimento UVC del Solar Orbiter • Compact(72mm x 72mm x 50mm) • Lightweight • Fully vacuum compatible • 4096 x 4096 maximum CCD format • Three-stage Peltier cooler • Two available thermal links between the CCD and the TEC (ΔT=-85°C/-60°C) • Very low noise preamplifier stage (1.8 nV/Hz r.m.s.)

  2. Forme d’onda del CCD (fasi orizzontali in alto e verticali in basso) come appaiono ad uno strumento chiamato “analizzatore di stati logici”

  3. Photomultipliers CCD Micro-Channel Plates Photodiodes (a-Si, treated Si, Al) Problemi dei rivelatori UV • high voltage, l > 110 nm, • low fluxes, dark current • low UV sensitivity, unstable, • not radiation hard, highly visible sensitive • high voltage, hygroscopic photocathodes, unstable gain, operated in UHV • low UV sensitivity, unstable, • not radiation hard, highly visible sensitive

  4. radiation hardness visible blindness Requests very low noise chemical stability high sensitivity to XUV photons Ideal UV detector for space

  5. Specifiche per i rivelatori del Solar Orbiter Common specification requirements for the imaging and spectroscopic instruments for remote sensing are • Solar blindness < 10-7 • Operating temperature ± 50°C • Frame rate  1000 s -1 • Frame format  2K  2K • Pixel size < 20 mm • Radiation hardness  50 Krad • Weight 1 kg Photon fluxes (counts/s/px) Imaging  103 Spectroscopy 102-103 3-D spectroscopy  105

  6. Rivelatori UV disponibili Charge integration None! CCD is not rad-hard Photon Counting • MCP + XDL • MCP + APS • MCP + CID Advantages • Photon counting • Solar blindness • Radiation hardness • Spatialised • Operating @ Tamb Disadvantages • Efficiency < 30% • High voltage biases • Weight • Spatial resolution (centroid required) • External electronics (to be shielded!)

  7. Alternativa: nuovi materiali fotosensibili Diamond & nitridesare appealing materials for the EUV photon detection. Their main properties are hereafter sumarized : • Eg = 5.5 eV  dark current < 1 pA  visible rejection (ratio 10-7)  high EUV sensitivity • Highly radiation hard • Chemical inertness • Mechanically robust (high Young modulus) • High electric charge mobility = fast response time • Low dielectric constant = low capacitance

  8. Rivelatori a diamante Device area: 6  6 mm2 Thickness: 40 µm Grain size: 20 µm Sensitive area 4 mm2 Interdigitated contacts spacing 20 m thickness 0.1 m electrode width 15 m No thermal annealing back contact 25 mm2

  9. Dark current

  10. Toff = 30 % Stabilità e risposta temporale

  11. Quantum Efficiency Diamond efficiency Comparisonwith other detectors [1] [2] [1] Naletto, Pace et al, 1994 [2] Wilhelm et al.,1995 E. Pace et al., Diam. Rel. Mater. 9 (2000) 987-993.

  12. Diamond – Responsivity Dark current @ room temperature Vbias = 30 V

  13. Our proposal: flip-chip CMOS imager • Select the most appropriate sensitive material • Exploit the advantages offered by the CMOS technology to fabricate system-on-a-chip detectors • Join the best material and on-chip CMOS electronics by means of the consolidated flip-chip technology (applied to IR photon and particle detection) The idea

  14. Incident radiation Open electrode Sensitive layer CMOS imager 12.5 mm Pixel array Diamond bump-bonded detector

  15. Applicazioni attuali alla fisica delle particelle

  16. Advantages of flip-chip technology EUV sensitive layers bump-bonded on CMOS imagers could have many appealing features, such as: • High responsivity • Visible rejection • Available technologies • Frame format and pixel size in the spec • On-chip read-out electronics • Radiation hardness • Compact detector (reduced weight) • Low power consumption • High frame rate • Windowing

More Related