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MTT 2002 Seattle June 5th S. K. Leong

MTT 2002 Seattle June 5th S. K. Leong. LDMOS and Vdmos 30 - 512 Mhz BroadBand Amps. 30 - 512 Mhz Broadband Amps. A. 30 - 512 Multi-octave Military Amplifiers covering tactical ground, air, civil and those of allies. B. Polyfet Technical Bulletins Different Output Power and Gain

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MTT 2002 Seattle June 5th S. K. Leong

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  1. MTT 2002Seattle June 5th S. K. Leong LDMOS and Vdmos 30 - 512 Mhz BroadBand Amps

  2. 30 - 512 Mhz Broadband Amps • A. 30 - 512 Multi-octave Military Amplifiers covering tactical ground, air, civil and those of allies. • B. Polyfet Technical Bulletins • Different Output Power and Gain • 28V and 12.5V voltage supplies • C. 4:1 Broadband matching • Variable transformation ratio to match transistor Zin • Small physical size. • D. Computer Simulation results

  3. Polyfet Technical Bulletins

  4. Design Considerations • Load line required by device changes with frequency • Load Pull techniques not practical for high power and low frequencies. • Computer simulation using Spice model is preferred. • 4:1 Most practical transformer for broadband • Use effective inductance of coaxial transmission line as the inductive component in the PI matching network. Keep overall physical dimension small. (A lumped 4:1 replacing a 4:1 plus a low pass network)

  5. Zin and Zout of Transistor

  6. 4:1 Transformer with Balun

  7. 4:1 Transformer

  8. 4:1 Transformer

  9. 4:1 with embedded lump matching

  10. 4:1 with embedded lump matching • At low freq., matched to load line rather than impedance

  11. 4:1 with embedded lump matching

  12. Picture of TB-160 Link to Application Note TB160

  13. TB-160 Topview

  14. TB-160 Sim. Schematic Link to AWR simulation file

  15. MWO Simulation with layout

  16. MWO Simulation. Pin =30dbm

  17. Actual Measurement Pin=30dbm

  18. MWO Simulation. High Pin

  19. Actual Measurement Pin=38dbm

  20. Simulated Pin Pout at 250 Mhz

  21. Measured Pin Pout at 250 Mhz

  22. S11

  23. TB160 ADS Small Signal Simulated

  24. TB-160 ADS Pwr Simulated

  25. Simulators • This circuit has been successfully simulated using • AWR Microwave Office 2002 Ver 5.5 • Agilent ADS • Results are comparable between simulators

  26. Conclusion • Achieved multi octave broad banding with both Ldmos and Vdmos at high RF Output Levels • Good correlation between Actual Measurements to Simulation using Polyfet Spice Models • Small physical size matching network made possible by using inherent inductance of coaxial transmission lines along with shunt capacitance. • Transistor impedance changes with frequency.

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