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Theoretical modeling of short pulse laser interaction with condensed matter

Theoretical modeling of short pulse laser interaction with condensed matter. Tzveta Apostolova Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences. ELI Nuclear Physics Workshop’2010. Short pulse nanostructuring.

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Theoretical modeling of short pulse laser interaction with condensed matter

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  1. Theoretical modeling of short pulse laser interaction with condensed matter Tzveta Apostolova Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences ELI Nuclear Physics Workshop’2010

  2. Short pulse nanostructuring Nanostructures in Si – Lebedev Physical Institute 2009 – unbuplished Number of incident pulses ~103 Energy density ~50-300 mJ/cm2 Wavelength 744 nm Pulse duration (FWHM) ~100 fs Pulse energy <0.5 mJ Pulse repetition rate 10 Hz

  3. Formation of filaments Single pulse filaments in PMMA, energy density 0.50-25 mJ/cm2– Lebedev Physical Institute 2009 Similar could be obtained for Si if irradiated with mid-IR

  4. Laser radiation parameters Wavelength Conduction band Pulse duration electron Repetition rate Laser radiation Forbidden band Intensity • The damage of materials can be described by a critical density of photo-excited electrons in the conduction band hole Valence band Laser radiation GaAs semiconductor

  5. Non-uniform laser radiation • spatially and temporally dependent laser field inside the material • Optical damage • Electrical damage for GaAs • Structural damage

  6. Theoretical model mean traveling length of electron in one period of laser radiation induced energy due to the interaction of electrons with the laser field

  7. Energy loss to phonons term Diffusion Current Spontaneous Phonon Emission Current Joule Heating Current Distribution Function Conduction-Electron Energy Ionization due to Coulomb Scattering Recombination due to Phonon Scattering Pumping due to Photon Absorption Terms: Photon ionization Impact ionization Auger recombination • The distribution function is a product of the density-of-states and the state-occupation probability • Electrons can flow to higher energies by gaining power from an incident pulsed laser field • Electrons can also flow to lower energies by emitting spontaneous phonons • The competition between different currents in the energy space can be described by a Fokker-Planck equation

  8. local fluctuation of electron kinetic energy is included in the kinetic Fokker-Planck equation under the condition but Drude ac conductivity

  9. dependence on magnitude and frequency of the field Single photon excitation

  10. Effects of thermal emission and recombination scattering-in scattering-out scattering-in scattering-out

  11. Effects of lattice temperature

  12. Time dependence of the electron density and average kinetic energy for different intensities and different bandgap widths

  13. WL

  14. Effects of joule heating

  15. Effects of joule heating

  16. Conclusions • We derive quantum-mechanically a generalized Fokker-Planck type equation in energy space for conduction electrons in semiconductors irradiated by laser field in which the effect of the laser field treated classically is included via -energy drift term for conduction electrons-joule heating effect -renormalization of the electron-phonon scattering by the field- effect of free carrier absorption • We include source and sink terms (up to 2nd order in perturbation theory) • We investigate numerically the factors influencing the laser-induced damage to semiconductors

  17. Results • For ,in GaAs we obtain • The calculations show that for the chosen parameters the semiconductorGaAsis electrically damaged but not optically damaged. • We find out that the average conduction electron kinetic energy is smaller than the bangap energy at all timeswhich means that for the given parameters of the laser field the semiconductor GaAs is structurally stable.

  18. Work was done in collaboration with Dr. Danhong Huang Dr. David Cardimona Dr. Paul Alsing at the United States Air Force Research Laboratory

  19. In the final result include the spatial dependence by taking the envelope of the electric field as a function of the spatial coordinates regarded as parameters. Spatial dependence of Source terms Single photon excitation

  20. Generalized non-local Fokker Planck equation Following E. Bringuier J. Appl. Phys 86, 6847, (1999) we can augment the energy –space equation by adding the spatially dependent currents on the LHS

  21. Spectral drift velocity and diffusion coefficient at energy in coordinate space electron with at energy change before any collision occurs is the probability for the electron starting from not to experience collisions between 0 and t is first order expansion E.Bringuier Phys. Rev. B 52, 1995

  22. averages over a collision free flight The average energy gained over a flight is (to order ) is Number of states in a surface element in space ensemble average over a constant energy surface

  23. The drift velocity in real space is related to the field induced drift velocity in energy space by The position-space diffusion coefficient is related to the field dependentdiffusion coefficient in energy space by

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