'Conduction electrons' diaporamas de présentation

Physics 2 for Electrical Engineering

Ben Gurion University of the Negev. www.bgu.ac.il/atomchip , www.bgu.ac.il/nanocenter. Physics 2 for Electrical Engineering. Lecturers: Daniel Rohrlich , Ron Folman Teaching Assistants: Ben Yellin, Yoav Etzioni Grader: Gady Afek.

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Textbook and Syllabus

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Solid State Physics

Crystalline Structure. Lattice. Basis. +. Solid State Physics. Quantum mechanics has played a very important role in the development of our understanding of the electronic and physical nature of solid materials.

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T. Senthil (MIT) Subir Sachdev Matthias Vojta (Karlsruhe)

paper rejected by cond-mat. Subject: cond-mat daily 0209108 -- 0209143 received 1651 Date: Thu, 5 Sep 2002 22:56:09 -0400 Subject: cond-mat daily 0209145 -- 0209175 received 1651 Date: Sun, 8 Sep 2002 22:53:13 -0400.

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Metals: Free Electron Model

Metals: Free Electron Model. Physics 355. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. +. Free Electron Model. Schematic model of metallic crystal, such as Na, Li, K, etc.

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Average: 69 % Top grade: 100 % ?

Please pick up your Midterm and Solutions from front of class . Average: 69 % Top grade: 100 % ? . Test % score distribution:. Make sure you go through your test and the solutions carefully to understand where you went wrong. Ask me at office hours if needed.

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Chapter 26. Current and Resistance

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Announcements

Announcements. HW1 is posted, due Tuesday 9/4 Discussion Section 102 (We 9-10) moved to 289 Cory Lab sections: If a section is over-subscribed, then priority will be given to students officially registered for this section. Paid position for videotaping EE105 lectures is available.

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Theoretical modeling of short pulse laser interaction with condensed matter

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Introduction to electricity and electric circuits

Introduction to electricity and electric circuits. electric charges, currents and voltage. Example: He-Atom. 2 protons : + 2e 2 neutrons : no charge 2 electrons : - 2e elementary charge, e = 1.6 x 10 -19 C Atoms are neutral , unless electrons are removed (or added)

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Lecture 15

Lecture 15. OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs . voltage characteristic Reading: Chapter 6.1-6.2.1. GATE LENGTH, L g. OXIDE THICKNESS, T ox. M. Bohr, Intel Developer Forum , September 2004.

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Lecture 7 Chemical/Electronic Structure of Glass Syllabus Topic 6. Electronic spectroscopy studies of glass structure

Lecture 7 Chemical/Electronic Structure of Glass Syllabus Topic 6. Electronic spectroscopy studies of glass structure. Fundamentals and Applications of X-ray Photoelectron Spectroscopy (XPS) a.k.a. Electron Spectroscopy for Chemical Analysis (ESCA). Bibliography.

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Lecture 3

Lecture 3. Intrinsic Semiconductor. When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also: n 0 p 0 = n i 2 Then: n 0 = p 0 = n i n i = intrinsic carrier concentration [cm -3 ]

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Relation between the Anderson model and the s-d model

Relation between the Anderson model and the s-d model. Ref.) J. R. Schrieffer and P. A. Wolff, Phys. Rev. 149 (1966) 491. Miyake Lab. Akiko Shiba. Outline. Introduction Anderson model s-d model Derivation of the s-d model Perturbation theory Schrieffer- Wolff transformation Summary.

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Solar power

Solar power. Made by:- Usman farid rizwan. What is solar power.

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Kondo effect in bilayer graphene

Kondo effect in bilayer graphene. Diego Mastrogiuseppe , Sergio Ulloa & Nancy Sandler. Department of Physics & Astronomy Ohio University , Athens, OH. Kondo effect in a simple metal. Anderson model. Schrieffer-Wolff transformation. Kondo model.

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Lecture #2

Lecture #2. OUTLINE Electrons and holes Energy-band model Read: Chapter 2 (Section 2.2). Electronic Properties of Si. ? Silicon is a semiconductor material. Pure Si has a relatively high electrical resistivity at room temperature. ? There are 2 types of mobile charge-carriers in Si:

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Electro Osmosis Effect for Ionic Channel Control

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Research

Materials Computation Center, University of Illinois Duane D. Johnson and Richard Martin, NSF DMR-03-25939 Spintronics in Triple Quantum Dots J.P. Leburton (ECE) and R.M. Martin (Physics). Research

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Research

Materials Computation Center, University of Illinois Duane D. Johnson and Richard Martin, NSF DMR-0325939 Spintronics in Triple Quantum Dots J.P. Leburton (ECE) and R.M. Martin (Physics). Research

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