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Design Consideration for Future RF Circuits

Design Consideration for Future RF Circuits. Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium 27 May 2007 Author : Behzad Razavi Presenter : Kyungjin Yoo. Introduction. RF circuits - 2 trends Device level: speed, noise System level: System-on-chips New paradigm

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Design Consideration for Future RF Circuits

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  1. Design Consideration for Future RF Circuits Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium 27 May 2007 Author : Behzad Razavi Presenter : Kyungjin Yoo

  2. Introduction • RF circuits - 2 trends • Device level: speed, noise • System level: System-on-chips • New paradigm • Multi-band, multi-mode transceivers • Baseband processors • Issues in this paper • Technology scaling • Design techniques

  3. Impact of Technology Scaling • Lower supply voltages • Higher gate leakage currents • Lower transistor output impedances

  4. Supply Voltage Scaling • Noise, linearity, gain • Trade off • Mixer • Oscillator • VCO

  5. Transistor Output Impedance • Lower the Q of oscillators • deQing effect of ro >> Rp • Negligible in 90-nm technology : ro=2.3 Kohm • Problematic in 65-nm and 45-nm generation

  6. Gate Leakage Current • Gate leakage current in 90-nm tech : 10~100pA/micrometer^2 • 90-nm : IG/Cp70-700 microV/ns • Tin=50ns causes 3.5-35mVpp ripple

  7. Design Techniques • Low-Voltage Active Mixers • Multi-Band Techniques

  8. Low-Voltage Active Mixers • Principle : bias current to the switching pair and the loads < bias current to the RF transconductor device

  9. Multi-Band Techniques • Goal • Minimize area • avoid long interconnects at high freq. • Layout compaction • Stacked inductors: LNA,VCO • Nested inductors: dual-band oscillator

  10. Thank you! Q&A

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