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Design and development of thin double side silicon microstrip sensors for CBM experiment

Design and development of thin double side silicon microstrip sensors for CBM experiment. Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University. 3rd Work Meeting of the CBM-MPD STS Consortium. 3rd Work Meeting of the CBM-MPD STS Consortium. Sensor Geometry.

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Design and development of thin double side silicon microstrip sensors for CBM experiment

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  1. Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 3rd Work Meeting of the CBM-MPD STS Consortium

  2. 3rd Work Meeting of the CBM-MPD STS Consortium

  3. Sensor Geometry • According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2 • Strip pitch for both sides - 58 μm • Stereoangle - ±7.5о • Number of stripson both sides - 1024 • Number of readout chips for both sides - 8 3rd Work Meeting of the CBM-MPD STS Consortium

  4. Sensor N-side Contact Pads 3rd Work Meeting of the CBM-MPD STS Consortium

  5. N-side poly-Si resistors 3rd Work Meeting of the CBM-MPD STS Consortium

  6. N-side p-stops configuration 3rd Work Meeting of the CBM-MPD STS Consortium

  7. N-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

  8. Sensor P-side 1st and 2nd metal 3rd Work Meeting of the CBM-MPD STS Consortium

  9. Sensor P-side 1st and 2nd metal details 3rd Work Meeting of the CBM-MPD STS Consortium

  10. P-side Guard Rings 3rd Work Meeting of the CBM-MPD STS Consortium

  11. Baby sensor 3rd Work Meeting of the CBM-MPD STS Consortium

  12. Baby sensor- p-side 3rd Work Meeting of the CBM-MPD STS Consortium

  13. Baby sensor – n-side 3rd Work Meeting of the CBM-MPD STS Consortium

  14. Baby sensor – n-side 3rd Work Meeting of the CBM-MPD STS Consortium

  15. Baby sensor – n-side 3rd Work Meeting of the CBM-MPD STS Consortium

  16. Results • Number of masks: • N-side – 8 • P-side – 9 • Estimated production time - 3 months + 1 month for masks production. 3rd Work Meeting of the CBM-MPD STS Consortium

  17. Expected • Full Depletion Voltage (FDV) - <50 V • Working voltage –70 - 250V • Dark current at 100 V – < 15 nА/см2 • AC capacitance - >10 pF/см • Capacitors breakdown voltage - >170 V • Bias resistor value - 1.0 ± 0.4 MOhm • Number of bad strips - <0.5%/side 3rd Work Meeting of the CBM-MPD STS Consortium

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