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N-doped ? c-SiO x :H layers with wide array of optical and electrical properties deposited

Microstructure analysis of n-doped ? c-SiO x :H reflector layers and their use in stable a-Si:H p-i-n cells. Pavel Babal * , Johan Blanker, Ravi Vasudevan, Arno Smets, and Miro Zeman Photovoltaic Materials and Devices, Delft University of Technology. *. Motivation.

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N-doped ? c-SiO x :H layers with wide array of optical and electrical properties deposited