'Bias voltage' diaporamas de présentation

CHAPTER 7

CHAPTER 7. CARRIER LIFETIMES. 7.1 INTRODUCTION. Lifetime: Generation lifetime, recombination lifetime. Occur in bulk: lifetime ? g , ? r . . Occur in surface: surface velocity s g , s r .

1.4k views • 85 slides

Coaxial Architecture

Coaxial Architecture. Tree-and-Branch Architecture. Express Trunk. HFC Architecture. HUBS. node. Tap. Customer Homes. Businesses amp in building. Rural Network. Other cable outputs. Fiber Optic. Cable RF. (Node) Optics RX/TX. Headend. Active Device. Near Passive Network.

1k views • 71 slides

712 views • 45 slides

SVT

SVT. Michael Merkin SINP MSU. Tracking Specifications Summary. Performance Expectations of the Detector. SVT : Barrel + Forward Barrel Silicon Tracker ( BST ): Stand Alone Tracker ? -coverage ~ 2 ? ? -coverage ~ [35 o , ~125 o ] Momentum resolution ~ 50 [MeV/c]

680 views • 43 slides

Issues on Segmented Low-Gain Avalanche Detectors (LGAD)

Issues on Segmented Low-Gain Avalanche Detectors (LGAD). Hartmut F.W. Sadrozinski with Vitaliy Fadeyev , Patrick Freeman, Zachary Galloway , Zhijun Liang,

545 views • 31 slides

ESA In-Flight Calibration and First Results

ESA In-Flight Calibration and First Results. J. McFadden, C. Carlson, D. Larson UC Berkeley SSL. Requirements and Specifications. The ESA instrument measures 3-D electron and ion energy distribution functions over the Energy range ~5 eV to 30 keV (25 keV for ions).

423 views • 31 slides

Tile production and SiPM test facilities at ITEP

408 views • 25 slides

UW-Madison IEC Laboratory continuing capacity upgrades and infrastructure upgrades

UW-Madison IEC Laboratory continuing capacity upgrades and infrastructure upgrades. U.S. Japan 2009 IEC Workshop Madison, WI, USA.

386 views • 24 slides

Instructor: Paul Gordy Office: H-115 Phone: 822-7175 Email: PGordy@tcc

489 views • 23 slides

Electrical Techniques

Electrical Techniques . MSN506 notes. Electrical characterization. Electronic properties of materials are closely related to the structure of the material on the atomic scale In order to use materials in device applications, we must characterize and understand their electrical properties

454 views • 23 slides

Selection of Silicon Photomultipliers for ILC Analogue Hadron Calorimeter Prototype

Selection of Silicon Photomultipliers for ILC Analogue Hadron Calorimeter Prototype. New Photon Detectors Workshop PD07 University of Kobe, June 27-29, 2007 E.Tarkovsky (ITEP Moscow), in the frame of CALICE collaboration. Lay-out ILC Hadron Calorimeter prototype with SiPM readout

365 views • 23 slides

Radiation Damage Effects in the NA60 Silicon Pixel Detectors

Radiation Damage Effects in the NA60 Silicon Pixel Detectors. The NA60 Experiment The NA60 Silicon Pixel Detector Predictions of Radiation Damage Fluence in the 2003 physics run Leakage Current Depletion Voltage Measurements in the 2003 Physics Run Depletion Voltage Leakage Current

647 views • 18 slides

Active Devices

305 views • 18 slides

Low temperature electrical characteristics of irradiated strip sensors

Low temperature electrical characteristics of irradiated strip sensors. Irradiation of ATLAS07 miniature sensors on reactor in Rez near Prague Experimental set-up for temperature -30deg C Bulk IV and CV characteristics Coupling and an inter-strip capacitance

302 views • 18 slides

Static Measurements of Semiconductor Materials

Static Measurements of Semiconductor Materials. Alessandra Borgia PHY651 Professor Marina Artuso December 14, 2009. Outline . Semiconductors as detectors Theoretical background Setup & Equipment Techniques Measurements Concluding remarks. Semiconductors as detectors Silicon.

252 views • 16 slides

265 views • 16 slides

Particle Detection System for MERIT

Particle Detection System for MERIT. Detector types. Main: Diamond detectors Same principle as a PIN-diode, with reverse bias voltage and separation of electron-hole pairs, created by traversing MIPs.

522 views • 10 slides

118 views • 3 slides

Optical and electrical characterization of 4H-SiC detectors R. Schifano, A. Vinattieri INFM - Dipartimento di Fisica, Un

125 views • 1 slides

TCAD Simulation Semiconductor Technology Computer-Aided Design (TCAD) tool

2013/9/2 HSTD9-ID54. Potential in bulk, 2D display. p-stop. Silicon avalanche breakdown voltage ~300 kV/cm. n + -Implant. n + -Implant. Location of bias voltage breakdown in n-in-p silicon segmented sensors with p-stop structure before and after irradiation. Backplane (-200 V).

596 views • 1 slides