'Oxide charge' diaporamas de présentation

Surface Effects and Breakdown Voltage

Surface Effects and Breakdown Voltage. Gian-Franco Dalla Betta INFN and DISI - University of Trento Via Sommarive, 14 I-38123 Povo di Trento (TN), Italy dallabe@disi.unitn.it. Outline. Introduction Basic mechanisms Main parameters: how to measure them experimental results

510 views • 32 slides

Device-level Radiation Effects Modeling

Device-level Radiation Effects Modeling. Hugh Barnaby, Jie Chen, Ivan Sanchez Department of Electrical Engineering Ira A. Fulton School of Engineering Arizona State University. Topics. Target of Research Radiation Effect Modeling: A TCAD-based approach

467 views • 28 slides

373 views • 27 slides

284 views • 27 slides

SiO 2 properties and applications. Thermal oxidation basics. Manufacturing methods and equipment.

Chapter 6 Thermal oxidation and the Si/SiO 2 interface. SiO 2 properties and applications. Thermal oxidation basics. Manufacturing methods and equipment. Measurement methods (mechanical, optical, electrical). Deal-Grove model (linear parabolic model).

563 views • 26 slides

251 views • 24 slides

L11 110816 ECE 4243/6243 Fall 2016 UConn F. Jain

L11 110816 ECE 4243/6243 Fall 2016 UConn F. Jain Notes Chapter L11 (page 226-166). FET Operation slides 3-8 3-Scaling Laws of FETs (slides 9-22). V T or V TH equation. Al-SiO 2 -pSi Al-SiO 2 -nSi . Under Threshold.

225 views • 22 slides

Lecture 18

617 views • 17 slides

H. F.-W. Sadrozinski, C. Betancourt, R. Heffern, I. Henderson, J. Pixley, A. Polyakov, M. Wilder

Total Dose Dependence of Oxide Charge, Interstrip Capacitance and Breakdown Behavior of sLHC Prototype Silicon Strip Detectors and Test Structures of the SMART Collaboration. H. F.-W. Sadrozinski, C. Betancourt, R. Heffern, I. Henderson, J. Pixley, A. Polyakov, M. Wilder SCIPP, UC Santa Cruz

280 views • 14 slides