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Semiconductor Memory

Semiconductor Memory

Semiconductor Memory. Issues in Flash Memory NOR vs. NAND Multilevel cell: 2-bit cell Threshold voltage distribution Reliability Endurance, Retention, Program disturb Scaling Limitation due to oxide thickness Limitation due to amount of charge High level Data Management

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845 views • 36 slides
Topics

Topics

Topics. Latches and flip-flops. RAMs and ROMs. Register. Stores a value as controlled by clock. May have load signal, etc. In CMOS, memory is created by: capacitance (dynamic); feedback (static). Variations in registers. Form of required clock signal.

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557 views • 34 slides
McKenneman, Inc. SRAM Proposal

McKenneman, Inc. SRAM Proposal

McKenneman, Inc. SRAM Proposal. Design Team: Jay Hoffman Tory Kennedy Sholanda McCullough. Outline. Introduction Design Approach Schematics Block Design Top-level Design Layout Bitcell Layout Peripheral and Block Layout Simulation SNM simulations of bitcell Block simulations

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448 views • 23 slides
Work sponsored by the Space Vehicles Directorate of the Air Force Research Laboratory

Work sponsored by the Space Vehicles Directorate of the Air Force Research Laboratory

Demonstration of Chalcogenide Based Non Volatile Memory 10 September, 2003 J. Rodgers, J. Maimon, L. Burcin, K. Hunt. Work sponsored by the Space Vehicles Directorate of the Air Force Research Laboratory. Presentation Outline. C-RAM Overview CTCV Radiation Test Results

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298 views • 19 slides
EE241 Final Project High Speed Sense Amplifier With Offset compensation for SRAMs Yida Duan

EE241 Final Project High Speed Sense Amplifier With Offset compensation for SRAMs Yida Duan

EE241 Final Project High Speed Sense Amplifier With Offset compensation for SRAMs Yida Duan. Motivation & Proposed Solution. Problem (Offset). Time Margin needed for input to grow > offset Response Time = Time Margin + Sense Time

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351 views • 15 slides
STT-RAM Test Chip #1

STT-RAM Test Chip #1

STT-RAM Test Chip #1. Weekly Status Report Date: Wed Oct-21-2009. Amr Amin Preeti Mulage UCLA CKY Group. Previous Action Items. Cell Design: Investigating LVT devices, 1.2V supply, boosted WL voltage ? Done Sensitivity analysis ? In progress ( need data about MTJ variations )

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268 views • 8 slides

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