'Velocity saturation' diaporamas de présentation

Electrical and Computer Engineering and Network for Computational Nanotechnology

IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom. Electrical and Computer Engineering and Network for Computational Nanotechnology Birck Nanotechnology Center Purdue University, West Lafayette, Indiana USA.

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Digital Integrated Circuits A Design Perspective

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ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 37, 11 Apr 14. Chp 06: MOSFETs Aspects of realistic MOSFET operation (n-channel p-substrate) Comment on 2D mobility m Use of field oxide in CMOS

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Velocity Saturation Effects

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Velocity Saturation Effects

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MOSCAP Non-idealities

MOSCAP Non-idealities. Effect of oxide charges Poly-Si gate depletion effect V T adjustment HW9. Oxide Charges. Within the oxide: Trapped charge Q ot High-energy electrons and/or holes injected into oxide Mobile charge Q M

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Supplementary Slides for Lecture 22

Supplementary Slides for Lecture 22. EE130/230M Spring 2013. The Impact of MOSFET Scaling. 1971. 2012.5. # of Transistors: 2300 3 billions Performance: 740 KHz > 3 GHz

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Analog IEP

Analog IEP. VLSI Lab@IITD. Channel Length Modulation. Velocity Saturation.

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