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Detector Characteristics

Detector Characteristics. Detector Details. Vital Statistics. Overall detector area: 6.4 cm by 6.4 cm Wafer thickness: 400 m m Silicon: n-type substrate, p-type strips Large substrate resistivity: 5-8 k W Number of strips: 320 Strip pitch: 194 m m Strip width: 50 m m

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Detector Characteristics

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  1. Detector Characteristics

  2. Detector Details

  3. Vital Statistics • Overall detector area: 6.4 cm by 6.4 cm • Wafer thickness: 400 mm • Silicon: n-type substrate, p-type strips • Large substrate resistivity: 5-8 kW • Number of strips: 320 • Strip pitch: 194 mm • Strip width: 50 mm • AC coupled strip readout

  4. Some Considerations in Estimating Energy from TOT • Detector: Energy deposited => Charge Q in detector • Landau Distribution of deposited energy • Shot noise • Preamplifier and Front End Electronics • Threshold Calibration • Charge Saturation: plateau in TOT vs. Input charge response • Controller and Readout => TOT • Estimated charge Q => Estimated particle energy

  5. Leakage Current • Possible source of detector noise • Minimized with care. Usually a small noise source • Shot noise. Mainly affects long shaping time. • Temperature dependence: • Leakage current doubles for each 7°C rise in detector temperature • Bias voltage dependence: • Illustrated on following chart

  6. I-V Characteristics HKM Factory Data, Detector 312. Factory Data for other 3 detectors similar. 25°C SCIPP Data, Apr. 25, 2001 24°C

  7. Energy Deposition Comparison of Landau distribution (theoretical line) with ToT data from GLAST

  8. Two MIP Events Comparison of theoretical and observed energy deposition for possibility of 2 tracks passing through the same strip

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