0 likes | 19 Vues
Silicon carbide (SiC) MOSFETs outperform traditional silicon power MOSFETs in both dynamic and thermal performance. They offer several advantages, such as high efficiency, reduced switching losses, enhanced thermal capabilities up to 175u00b0C, and the elimination of the need for an external freewheeling diode. SiC MOSFETs also eliminate tail current, leading to faster operation, lower switching losses, and increased stability.
E N D
Silicon Carbide (SiC) MOSFET Market Silicon carbide MOSFETs outperform conventional silicon power MOSFETs in terms of dynamic and thermal performance. It has several advantages, including high efficiency and low switching losses, improved thermal capabilities up to 175 degrees Celsius, and the elimination of the need for an external freewheeling diode. Next Move Strategy Consulting
Agenda • Market Overview • Market Segmentation • Regional Analysis • Key Market Players • Key Highlights Next Move Strategy Consulting
Market Overview • Silicon carbide MOSFETs outperform conventional silicon power MOSFETs in terms of dynamic and thermal performance. • Silicon carbide has a lower ON resistance and smaller chip size, which results in less capacitance and gate charge. • Silicon carbide MOSFET is perfectly suited for power electronics applications, due to its ability to withstand high voltages, up to ten times higher than those used with silicon. • Power electronics ensure that electrical power is effectively and efficiently controlled and converted. • The high material and fabrication costs of silicon carbide (SiC) MOSFET are expected to restrain the growth of the market during the forecast period. Next Move Strategy Consulting
By Vertical • Energy and Power • Automotive • Electric Vehicle • Hybrid Electric Vehicle • Consumer Electronics • Smartphone • Camera • Laptop • Audio & Video Device • Other Home Appliances • Renewable Power Generation • Wind Turbine • Solar Power System • Defense • Telecom and Datacom • Industrial • Motor Drives • UPS • Others • Healthcare • Other Verticals Market Segmentation By Type • SiC Discrete (Chips and Devices) • SiC Module By Voltage Range • -40V to 100V • 101V to 300V • 301V to 900V • 901V to 1500V • 1501V to 4700V Next Move Strategy Consulting
Regional Analysis North America • The U.S. • Canada • Mexico Asia-Pacific • China • India • Japan • South Korea • Australia • Rest of Asia- Pacific RoW • UAE • Saudi Arabia • South Africa • Brazil • Remaining Countries Europe • The UK • Germany • France • Italy • Spain • Denmark • Netherlands • Finland • Sweden • Norway • Russia Next Move Strategy Consulting
Key Market Players • Infineon Technologies • Cree, Inc. • ROHM Co., Ltd. • STMelectronics • Fuji Electric • Semiconductor Components Industries, LLC • ON Semiconductor • General Electric • Wolfspeed • Renesas Electronics Next Move Strategy Consulting
Key Highlights • Energy Efficiency: SiC MOSFETs contribute to energy savings and improved system performance, making them highly sought after in applications requiring efficient power conversion and management. • Automotive Industry Adoption: The automotive sector is a significant growth driver, as SiC MOSFETs enhance the performance of electric and hybrid vehicles by enabling higher power densities and better thermal management. • Challenges: Despite their benefits, high manufacturing costs and limited production capacity of SiC materials pose challenges. However, ongoing advancements and investments in production technologies are expected to mitigate these issues. • Competitive Landscape: Key players in the market are focusing on technological innovations and strategic partnerships to strengthen their positions and drive market expansion. Next Move Strategy Consulting
THANK YOU Next Move Strategy Consulting Follow us www.nextmsc.com info@nextmsc.com +1-217-650-7991 Access Full Report - https://www.nextmsc.com/report/silicon-carbide-sic-mosfet-market Next Move Strategy Consulting