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ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 42, 23 Apr 14. Chp 14: Sensors Chemical ion sensors Temperature sensors Mechanical sensors. VM Ayres, ECE875, S14. Dipole layer on solution side.

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ECE 875: Electronic Devices

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  1. ECE 875:Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

  2. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  3. Dipole layer on solution side + + + + + + _ _ _ _ _ _ + + + + + + So dominated by effect of dipole layer  missing the - Qf/Cox term in VFB “talks” to semiconductor at its insulator surface VM Ayres, ECE875, S14

  4. How to incorporate the changes: replacing metal gate with ion-rich solution: VM Ayres, ECE875, S14

  5. Main question is: find IDsat Hidden question is: find VT <= find VFB <= find fs ✔ ✔ ✔ VM Ayres, ECE875, S14

  6. Electron affinity: qc, Sze Appendix G EC – EF: Chp. 01, Eq’n (21) VM Ayres, ECE875, S14

  7. Lecture 42, 23 Apr 14 • Chp 14: Sensors • Chemical ion sensors • Temperature sensors • Mechanical sensors VM Ayres, ECE875, S14

  8. Semiconductor strain gauge: Readout: DR/R VM Ayres, ECE875, S14

  9. Strain S = f(R) VM Ayres, ECE875, S14

  10. Strain S  resistance R: VM Ayres, ECE875, S14

  11. Find Dl : VM Ayres, ECE875, S14

  12. Find Dl : VM Ayres, ECE875, S14

  13. Strain S  resistance R: VM Ayres, ECE875, S14

  14. Focus on DR/R: VM Ayres, ECE875, S14

  15. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  16. Focus on DArea/Area / Dl /l : VM Ayres, ECE875, S14

  17. Focus on Dr/r / Dl /l : Cp: “longitudinal piezoresistive coefficient” VM Ayres, ECE875, S14

  18. Therefore: Strain S  resistance R: gauge factor G: VM Ayres, ECE875, S14

  19. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: Fig. 5, Chp. 14: For Si G = function (T) G is a pure #, no units VM Ayres, ECE875, S14

  20. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Sze Appendix G for Si and GaAs: Young’s modulus Y: units: pressure: GPa = force/area VM Ayres, ECE875, S14

  21. Factors: Young’s modulus Y, Poisson’s ratio n and gauge factor G: In Ioffe: Poisson’s ratio n: n is a pure #, no units For HW 09: match the Poisson’s ratio n value to the Sze Appendix G Young’s modulus VM Ayres, ECE875, S14

  22. Find what (including its symbol): VM Ayres, ECE875, S14

  23. Find what (including its symbol): Longitudinal piezoresistive coefficient Cp In Si @ 25oC = room temperature = 298 K ≈ 300 K Doping = 1020 cm-3 VM Ayres, ECE875, S14

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