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ABET Rubrics: Outcome E “An ability to identify formulate, and solve engineering problems”

ABET Rubrics: Outcome E “An ability to identify formulate, and solve engineering problems”.

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ABET Rubrics: Outcome E “An ability to identify formulate, and solve engineering problems”

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  1. ABET Rubrics: Outcome E “An ability to identify formulate, and solve engineering problems” Consider a conventional Silicon MOSFET (that is, there is no tunneling) that operates at a temperature of 180 K. Assume that all dopants are activated at this temperature. What is the theoretical minimum for the change in gate voltage that is necessary to change the current by ten times when the device is OFF (low gate voltages, before inversion has occurred). Assume the oxide relative dielectric constant to be 20, oxide thickness to be a variable that you can choose, and the relative dielectric constant of silicon to be 11.68. kT at 300K corresponds to an energy of 25.9 meV.

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