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This document summarizes findings from a group meeting held on September 8, 2010, focusing on the theoretical comparison of GaAs, InSb, ZnSe, and ZnTe using the Tight Binding method and VASP with the Local Density Approximation (LDA). Key references include studies from Cardona (1988), Richard (2004), and others that demonstrate electronic structure calculations and associated material properties for these semiconductors. Results emphasize the effectiveness of the Tight Binding approximation relative to VASP, providing insights into their comparative electronic properties.
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Electron poor materials research group Group meeting Sept. 08, 2010 Theory-VASP and simple tight binding
GaAs Comparison Cardona, Phys. Rev. B 38, 1806–1827 (1988)
GaAs Comparison Richard, PHYSICAL REVIEW B 70, 235204 (2004)
GaAs Comparison Elabsy, Physica B 405 (2010) 3709–3713
InSb Comparison Gang Zhu, Semicond. Sci. Technol. 23 025009 (2008)
InSb Comparison Mohammad, J Mater Sci 43:2935–2946 (2008)
ZnSe Comparison Cui, Journal of Alloys and Compounds 472 (2009) 294–298
ZnTe Comparison Khenata,Computational Materials Science 38 29–38 (2006)
Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
Tight Binding according to Harris.Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT