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**Advancements in Industrialized Me-C:H Layer Production with High Ionization for Economical Catalysis**

Explore novel Plasma Diagnostics and Metal Doping Effects in Metal Nitride/Carbide Substrate Adhesion processes for efficient film growth. Learn about Low-cost Investment methods and their Industrial Applications.

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**Advancements in Industrialized Me-C:H Layer Production with High Ionization for Economical Catalysis**

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  1. Me-C:H by CAAD • PVD/CAAD single synthesis • Adhesion • high ionization • Low cost investment • Industrialized production Me-C:H layer Transition layer • Plasma diagnostics • Catalysis effect of metal doping • Nitrogen doping effect Metal nitride/carbide Substrate

  2. Schematic of deposition process Dissociation of reactive species Me+, e-, particles FILM SUBSTRATE EVAPORATOR SOURCE Me++ e- + CxHy → Me, CmHn, Ci, H .. Transport from source to substrate Emission of metal species Film growth on substrate

  3. Chemical analysis of Cr-C:H-- RBS and ERD C2H H Cr Substrate P(C2H2)=1.5Pa (H/C)at% ~ 1:2

  4. Cross Sectional TEM of Cr-C:H/N(N/C atomic ratio of 3.5%) Cr-C:H/Nlayer Cr-C:H/Nlayer (d) transition layer CrN layer

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