'Film growth' diaporamas de présentation

EBB 323 Semiconductor Fabrication Technology

EBB 323 Semiconductor Fabrication Technology. Epitaxy. Dr Khairunisak Abdul Razak Room 2.16 School of Material and Mineral Resources Engineering Universiti Sains Malaysia khairunisak@eng.usm.my. Topic outcomes. At the end of this topic, students should be able to: Name 2 types of epitaxy

735 views • 50 slides

Integrated Circuit Technology

997 views • 49 slides

4/8/2002, Monday Scientists

4/8/2002, Monday Scientists. Interfacial Fracture. Interfacial Fracture (Scientists). J.W. Hutchinson J.R. Rice Z. Suo. Complex Singular Stress Field. Stress Oscillation. Mode Mixty. Electronic Packaging. MEMS Packaging. MicroElectroMechanical Systems. Processing.

231 views • 16 slides

Thin Film Growth

Thin Film Growth. Lecture 12 G.J. Mankey gmankey@mint.ua.edu. Factors Influencing Film Growth. Surface energy. Interfacial energy. Substrate temperature. Interface crystallography. Type of deposition source. Background gas. Surfactants.

198 views • 12 slides

Self-assembly Nanostructure and Lithography

Self-assembly Nanostructure and Lithography. Prepared by Thu Nguyen. Self-Assembled Nanostructures.

399 views • 11 slides

Reconstruction of the Surface of GaAs Film

MatSE390 Project. Reconstruction of the Surface of GaAs Film. Yunfeng Shi. FLUX RATIO. RHEED,SEM. FILM GROWTH. TEMPERATURE. Introduction.

292 views • 8 slides

Reconstruction of the Surface of GaAs Film

MatSE390 Project. Reconstruction of the Surface of GaAs Film. Yunfeng Shi. FLUX RATIO. RHEED,SEM. FILM GROWTH. TEMPERATURE. Introduction.

87 views • 8 slides

Controlling Stress Evolution in Ceramic Thin Films and Coatings

2 nm. Bonding at the boundaries between diamond grains is significantly different than bonding inside of grains -fringes show atom layers in nanodiamond crystals -bonding studied with spectroscopy (data not shown). Controlling Stress Evolution in Ceramic Thin Films and Coatings

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Structure/Function Relationships in Electronic Ceramics

Si(111). Si(111). Si(311). Si(311). flux at 10 keV. flux at 10 keV. 2.0x10 12 ph./sec. 2.0x10 12 ph./sec. 4.1x10 11 ph./sec. 4.1x10 11 ph./sec. flux at 20 keV. flux at 20 keV. 5.9x10 10 ph./sec. 5.9x10 10 ph./sec. 1.2x10 10 ph./sec. 1.2x10 10 ph./sec. spot size. spot size.

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Quantum Electronic Effects on Growth and Structure of Thin Films

CCD Image taken during growth. Pb(10L). Si(10L). Reflectivity. X-rays illuminate the substrate at a grazing angle. The surface normal is parallel to the horizontal direction. Direct beam is at bottom left-hand side of the picture (not pictured). oscillations and beating. magic islands.

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Dereje Seifu , Morgan State University, DMR 0958950

MRI-R2: Development of Magneto-Optic Kerr Effect for in-situ dynamic studies of film growth. Dereje Seifu , Morgan State University, DMR 0958950.

193 views • 1 slides

Temperature effects on the growth and electrical properties of Er 2 O 3 films on Ge substrates

Temperature effects on the growth and electrical properties of Er 2 O 3 films on Ge substrates. T. Ji 1 , T. X. Nie 1 , J. Cui 1 , Z. B. Fang 2 , X. J. Yang 1 , Y. L. Fan 1 , Z. Y. Zhong 1 , and Z. M. Jiang 1 1 State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

162 views • 1 slides