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Department of Electronics

Advanced Information Storage 13. Atsufumi Hirohata. Department of Electronics. 16:00 14/November/2013 Thursday (V 120). Quick Review over the Last Lecture. Read-out operation of 1C1T :. DRAM :. Data stored in a capacitor. “1”-data :. 1 V + ΔV = 2 V.

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Department of Electronics

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  1. Advanced Information Storage 13 Atsufumi Hirohata Department of Electronics 16:00 14/November/2013 Thursday (V 120)

  2. Quick Review over the Last Lecture Read-out operation of 1C1T : DRAM : Data stored in a capacitor. “1”-data : 1 V + ΔV = 2 V  Electric charge needs to be refreshed.  DRAM requires large power consumption. 3.6 V ON 2 V = 1 V + ΔV Refresh operation of 1C1T : “0”-data : 1 V – ΔV = 0 V 3.6 V ON 0 V = 1 V – ΔV * http://www.wikipedia.org/; * http://users.cis.fiu.edu/~prabakar/cda4101/Common/notes/lecture09.html

  3. 13 Static Random Access Memory • Volatile memory developmement • 6T-SRAM architecture • Read / write operation • 1T-SRAM • Various ROMs

  4. Memory Types Dynamic Rewritable Volatile DRAM SRAM Static Non-volatile Static MRAM FeRAM PRAM Read only Non-volatile PROM Static Mask ROM Read majority (Writable) Flash Non-volatile Static EPROM * http://www.semiconductorjapan.net/serial/lesson/12.html

  5. Manchester Automatic Digital Machine In 1949, Frederic C. Williams and Tom Kilburn developed Manchester Mark 1 : One of the earliest stored-programme computers * http://www.computer50.org/mark1/; ** http://www.wikipedia.org/

  6. Williams-Kilburn Tube Cathode-ray tube to store data : Utilise a minor change of electron charges at a fluorescent screen when an electron hit it. * http://www.wikipedia.org/

  7. Delay Line Memory In 1947, John P. Eckart invented a mercury delay line memory : Utilise an ultrasonic wave generated by a transducer to store a data. * http://www.wikipedia.org/

  8. Selectron Tube In 1953, Jan A. Rajchman (RCA) invented a selectron tube : An array of cathode-ray tubes is used to store data electrostatically. * http://www.ieeeghn.org/wiki/index.php/Jan_Rajchman; ** http://www.wikipedia.org/

  9. Static Random Access Memory (SRAM) Static random access memory (SRAM) : No need to dynamically refresh data.  Even so, the data is lost once the power is off. Flip flop is used to store data.  Low power consumption * http://www.wikipedia.org/

  10. 6T-SRAM Read Operation A standard SRAM cell : * http://allthingsvlsi.wordpress.com/tag/6t-sram-operation/

  11. 6T-SRAM Write Operation Write operation : * http://allthingsvlsi.wordpress.com/tag/6t-sram-operation/

  12. 1T-SRAM Pseudo SRAM developed by MoSys : By comparing with the conventional 6T-SRAM, • < 1/3 area • < 1/2 power consumption • Easy to be embeded • Simple interface • Similar to SRAM performance • Lower latency as compared with DRAM • High fidelity (< 1 FIT / Mbit, FIT : failure in time of 10 9 hours) * http://www.wikipedia.org/; ** http://www.mosys.com/high-density-memory.php

  13. Advantages of 1T-SRAM Comparison between 1T-SRAM, embedded SRAM (eSRAM) and 6T-SRAM : * http://media.corporate-ir.net/media_files/nsd/mosy/presentations/corp_pres_1103/sld012.htm

  14. Mask ROM Read-only memory made by a photo-mask : • Cheap • Simple structure • Ideal for integration • Initial mask fabrication cost • Lead time for mask fabrication • No design change without mask replacement * http://www.smspower.org/Development/MaskROMs

  15. Programmable ROM (PROM) PROM bipolar cell : * http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm

  16. PROM Architecture PROM architecture : * http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm

  17. Erasable PROM UV-light can erase stored data : * http://www.wikipedia.org/; * http://www.electronics.dit.ie/staff/tscarff/memory/rom.htm

  18. Electrically EPROM (EEPROM) In 1978, George Perlegos (Intel) developed electrical erasing mechanism : • Similar to flash memory • Individual bits are erasable. • Rewritable by simply writing a new data • Rewritability > 100k times • Small capacity (~ a few 10 bytes) • More complicated architecture as compared with flash memory • Higher cost for fabrication as compared with flash memory * http://www.answers.com/topic/eeprom

  19. EEPROM Usages EEPROM is used in various applications : * http://www.sanyosemi.com/en/memory/topics/serial-eeprom.php

  20. Connections between the Components Connections between CPU, in/outputs and storages : * http://testbench.in/introduction_to_pci_express.html;

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