90 likes | 205 Vues
This document details the construction and testing of a specialized apparatus for etching and byproduct studies, aimed to be completed by September 30, 2001. The motivation behind this research centers on the significant role that etch products play in etch chemistry. The design integrates plasma and surface diagnostics to measure all neutral and ionic species that affect surfaces. Experimental findings include detailed metrics from N2 and Ar/c-C4F8 plasma diagnostics. The study promotes model analyses that highlight the interaction between plasma species and material surfaces, especially in advanced semiconductor processes.
E N D
Testbed for Plasma-Wall and Etch Product Studies SFR Workshop May 24, 2001 Matthew Radtke, John Coburn, David Graves Berkeley, CA 2001 GOAL: Construction and testing of apparatus for etching and etch byproduct studies by 9/30/2001.
Motivation • Etch products often play major role in etch chemistry • System designed to study role of etch products. • Plasma and surface diagnostics combined. • Model studies require data: system measures all neutral and ionic species impacting surfaces. • N2 and Ar/c-C4F8 plasma diagnostics reported.
Diagnostics * mass spectrometer measurements are at wall * Langmuir probe can measure profile
Illustration of Diagnostics: N2 plasma
Neutral Densities: Ar/c-C4F8 plasma • Radical densities from APMS
Ion Densities and Langmuir probe measurements: Ar/c-C4F8 plasma * Morgan, L. (2000) - theoretical C4F8 total dissociation cross section calculation
Studies of plasma-wall interactions (e.g. Si/O/Cl for gate/trench etch) Studies of new high-K and gate stack etching (e.g. etch precursors, by-products, selectivity) Studies of plasma surface interactions (e.g. N2 plasma: PET; NF3 plasma: elastomer) 2002-2003 Milestones