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Semiconductor Industry Innovations Update 2009: Logic, DRAM, NVM, and Reliability Enhancements

Learn about the significant advancements in semiconductor technologies, including logic circuits, DRAM, nonvolatile memory, and reliability improvements introduced in 2009. Find details on key updates and transitions in various semiconductor components. Stay updated on the latest industry trends.

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Semiconductor Industry Innovations Update 2009: Logic, DRAM, NVM, and Reliability Enhancements

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  1. 2009 PIDS Chapter Updates Logic • Ring-oscillator delay added. Fan-out = 1 and 4. • Isatof p-MOSFET added. Other parameters assumed symmetric. • Subthreshold currents held constant independent of Lgate/year.HP, LOP, LSTP = 100 nA/mm, 5 nA/mm, 50 pA/mm respectively. • Criterion for S/D parasitic resistance set for degradation of 33%. DRAM • Small cell factor–4F2 introduced in 2011. • DRAM product size 1 yr delay from ITRS 2007/2008 (4 Gb in 2011). NVM • Floating-gate to charge-trapping NAND flash transition in 2012, delay 2 yr. • 3 bit/cell – 4bit/cell transition delays 2 years, to 2012. • 3-D charge-trapping flash in 2014, delay 1 year. • STT (spin-torque-transfer) MRAM added. Reliability • Major revisions in the reliability requirement specifications.

  2. 2009 Update: Nonvolatile Memory • NAND flash: • Half-pitch pulled-in 1 year from 2007/2008 Editions.

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