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Flash Mermory

Flash Mermory. How it works. Samsung 27nm NAND memory 4GB, 32 billion memory cells. History. 1955: Magnetic-core memory 0,1-1mm. Today: NAND Flash memory <20nm. Manufacturing. Photolithography. 34nm ~400 memory chips per wafer. Moores law. Properties. Advantages Cheap Small

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Flash Mermory

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  1. Flash Mermory

  2. How it works Samsung 27nm NAND memory 4GB, 32 billion memory cells

  3. History 1955: Magnetic-core memory 0,1-1mm Today: NAND Flash memory <20nm

  4. Manufacturing Photolithography 34nm ~400 memory chips per wafer

  5. Moores law

  6. Properties Advantages • Cheap • Small • Capacity (?) • Volatility (?) Drawbacks • Slow

  7. Multi Level Cell • Store more than one bit in each cell. • Cheaper • Problems • eMLC

  8. SONOS • Silicon-oxide-nitride-oxide-silicon • Better isolation – less leakage

  9. 3D Flash Memory 16GB – Samsung say 128GB within a year.

  10. MRAM Magnetoresistive RAM

  11. Resources • http://www.samsung.com/global/business/semiconductor/html/product/flash-solution/vnand/overview.html • http://www.samsung.com/global/business/semiconductor/news-events/press-releases/detail?newsId=12281 • http://www.computerweekly.com/podcast/Enterprise-MLC-eMLC-and-solid-state-storage-for-the-enterprise • http://semiconductorexpert.blogspot.se/2013/05/samsung-nand-1xnm-manufacturing-tlc.html • http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=00622505 • http://en.wikipedia.org/wiki/Flash_memory • http://en.wikipedia.org/wiki/SONOS • http://en.wikipedia.org/wiki/Magnetoresistive_random-access_memory • http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1283546

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