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Chapter 1

Chapter 1. RESISTIVITY. 1.1 INTRODUCTION 1.2 THE FOUR-POINT PROBE 1.3 WAFER MAPPING 1.4 RESISTIVITY PROFILING 1.5 CONTACTLESS METHODS 1.6 CONDUCRIVITY TYPE. 1.1 INTRODUCTION. The resistivity in the ingot is not uniform. The resistivity of epitaxial layers is uniform.

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Chapter 1

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  1. Chapter 1 RESISTIVITY

  2. 1.1 INTRODUCTION • 1.2 THE FOUR-POINT PROBE • 1.3 WAFER MAPPING • 1.4 RESISTIVITY PROFILING • 1.5 CONTACTLESS METHODS • 1.6 CONDUCRIVITY TYPE

  3. 1.1 INTRODUCTION

  4. The resistivity in the ingot is not uniform. • The resistivity of epitaxial layers is uniform. • Resistivity affects devices’ series resistance, • capacitance, threshold voltage, latch-up • behavior, breakdown voltage, hot carrier • performance.

  5. 1.2 THE FOUR-POINT PROBE

  6. Two-point arrangement showing the probe resistance Rp , the contact resistance Rc , the spreading resistance Rsp , and the semiconductor resistance Rs

  7. Correction Factors F1 corrects for sample thickness F2 corrects for lateral sample dimensions F3 corrects for the distance between probe and sample edges

  8. For non-conducting bottom For conducting bottom

  9. For t ≦ s/2 For F2 and F3 ≒ 1 Wafer thickness correction factors versus normalized wafer thickness; t is the wafer thickness, s the probe spacing.

  10. Wafer diameter correction factors versus normalized wafer diameter. For circular wafers D=wafer diameter; for rectangular samples D=sample width.

  11. Perpendicular to a non-conducting boundary Parallel to a non-conducting boundary Perpendicular to a conducting boundary

  12. Boundary proximity correction factors versus normalized distance d from the boundary. F31 and F32 are for nonconducting boundaries, F33 and F34 are for conducting boundaries.

  13. Parallel to a conducting boundary

  14. Resistivity of Arbitrarily Shaped Samples Arbitrarily shaped sample with four contacts.

  15. The van der Pauw correction factor F versus Rr.

  16. Typical symmetrical circular and square sample geometries. A Greek cross sheet resistance test structure. d≦ L/6

  17. A cross-bridge sheet resistance and line-width test structure.

  18. Measurement Errors and Precautions 1. Sample size 2. Minority / majority carrier injection 3. Probe spacing For small probe variations, the correction factor is sm=(s1+s2+s3)/3

  19. 4. Current Recommended four-point probe current versus Si resistivity

  20. 5. Temperature 6. High resistivity material Temperature coefficient of resistivity versus sample resistivity for 18oC≦T≦28oC for (a) Si, (b) Ge. For p-Si, the curve is valid only for boron-doped Si.

  21. 7. Surface preparation

  22. 1.3 WAFER MAPPING

  23. Wafer mapping is used to characterize the doping uniformity, especially the ion implantation uniformity

  24. (a) (b) • Four-point probe contour maps; • boron, 1015cm-2, 40keV, ρs(average)=98.5 ohms/square; • arsenic, 1015cm-2, 80keV, ρs(average)=98.7ohms/square; • 1% intervals. 200 mm diameter Si wafers.

  25. 1. Double Implant p(n) type impurity is implanted into n(p) substrate with a dose Φ1 and energy E1. The desire low dose impurity is implanted with a dose Φ2 and energy E2,no annealing. Φ2 ~10-2Φ1 and E2 ~ 80%-90% E1. Measurement is performed right after the implantation.

  26. 2. Modulated Photoreflectance Schematic diagram of the modulated photoreflectance apparatus

  27. Schematic diagram of the modulated photoreflectance apparatus

  28. A pump laser is used to generate thermal wave and cause the volume, thermoelastic, and the optical reflectivity to change. The laser is modulated at a certain frequency thus establish a periodic temperature variation in the wafer. A probe laser is used to detect these changes, mainly the reflectivity. The thermal wave induced changes are proportional to the implanted ions. 1011~1015 cm-2, contactless, non-destructive. Needs calibration

  29. (a) (b) • Modulated photoreflectance contour maps; • boron, 6.5×1012cm-2, 70keV, 648 TW units; • boron 5×1012 cm-2, 30keV, 600 TW units; • 0.5% intervals. 200mm diameter Si wafers.

  30. 3. Carrier Illumination • To determine junction depth. • A focused laser injects excess carriers into semiconductor and forming excess carrier distribution. The carrier density in the substrate is constant. • The index of refraction change Δn relates to excess carrier as: • A steep gradient is occurred at the edge of the doping profile.

  31. 4. Optical Densitometry UV shined on implant sensitive dye _________________________ Transparent substrate (glass) _________________________ No semiconductor wafer is used. Compare the final to initial (before and after) optical transparency with calibrated results. 1011~1013 cm-2.

  32. 1.4 RESISTIVITY PROFILING

  33. Differential Hall Effect For uniformly doped sample.

  34. Sample geometry with measurement proceeding from the surface into the sample.

  35. Dopant density profiles determined by DHE, spreading resistance profiling, and secondary ion mass spectrometry.

  36. Anodic oxidation method is adopted to grow a fixed thickness of oxide layer such that a certain portion of the silicon surface is consumed by etching the grown oxide. This method has a good reproducibility.

  37. Spreading Resistance Profiling Spreading resistance bevel block and the beveled sample with probes and the probe path shown by the dashed line.

  38. For a hemispherical contact For a cylindrical contact A cylindrical contact of diameter 2r to a semiconductor. The arrows represent the current flow.

  39. 80% of the potential drop due to the spreading phenomenon occurs within 5r. • 5g weight is applied. • The bevel angle θ is 1。~ 5。 forjunction depth of 1~2μm, and θ < 0. 5。 forjunction depth < 0.5μm. • For a step of 5um and an angle of 1o,the equivalent depth resolution is 870 Å.

  40. High-resolution spreading resistance and dopant density profiles.

  41. 1.5 CONTACTLESS METHODS

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