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Three types of recombination current in quantum wells were studied to optimize hole concentration for superior InGaN LED efficiency. The proposed LED structure with two-step p-doping concentrations shows potential for high efficiency without AlGaN EBL structures.
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In the QWs, three types of the recombination current are present: fixed:2×1011 cm-3/s TABLE I. List of A and C coefficients determined from the fit of EL effi- ciency curves for samples B–E.
Conclusion • The optimized hole concentration for achieving the highest EL efficiency was found to be ~2×1017 cm-3, where the electron leakage current is sufficiently suppressed and the QW degradation by Mg diffusion is minimized. • The proposed LED structure with two-step p-doping concentrations is expected to be advantageous for achieving high-efficiencyInGaN LEDs without AlGaN EBL structures.
References • H. Y. Ryu, J. I. Shim, C. H. Kim, J. H. Choi, H. M. Jung, M. S. Noh, J. M.Lee, and E. S. Nam, IEEE Photon. Technol. Lett. 23, 1866 (2011). • K. K€ohler, T. Stephan, A. Perona, J. Wiegert, M. Maier, M. Kunzer, and J.Wagner, J. Appl. Phys 97, 104914 (2005).