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Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detectio

Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection Megan C. Prestgard and Ashutosh Tiwari.

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Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detectio

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  1. Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection Megan C. Prestgard and Ashutosh Tiwari Discovery: We have observed a large inverse spin-Hall effect (ISHE) in ZnO films grown using Pulsed Laser Deposition. This discovery provides an entirely new means of measuring spin currents in semiconductors. Approach: Developed a novel device concept for the injection and detection of spin-polarized carriers. Results and Significance: First electrically detected measurement of the ISHE response in ZnO. The results illustrate the potential of ZnO in future spintronic devices, creating a path for achieving next-generation all-electrical transparent spintronic devices. Left: Device schematic illustrating the all-electrical system used for spin injection and detection. The red section is ZnO and the gray section is the metal contact. Right: Inverse spin Hall effect results at room temperature. Applied Physics Letters 104, 122402 (2014)

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