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Self-Consistent Model of Minority-Carrier Lifetime in Semiconductors

This lecture by Professor Ronald L. Carter, part of the Semiconductor Device Theory course, explores a self-consistent model for minority-carrier lifetime, diffusion length, and mobility in semiconductor materials. The study combines t_min data from various sources for both acceptor and donor doped silicon, along with diffusion coefficient models, to create an accurate predictive framework for semiconductor behavior. This research contributes to the understanding of charge carrier dynamics that are crucial for the design and optimization of electronic devices.

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Self-Consistent Model of Minority-Carrier Lifetime in Semiconductors

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  1. EE 5340Semiconductor Device TheoryLecture 29 - Fall 2009 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc

  2. Mark E. Law, E. Solley, M. Liang, and Dorothea E. Burk, “Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility, IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 8, AUGUST 1991. • A best-fit model is reported for tmin data from others for both acceptor doped and donor doped Si. • Combined their tmin data with the Lmin data reported by others and the diffusion coefficient model of Arora, et al. [IEEE Trans ED, ED-29, 1982, p. 292, ff] to fit a model for

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