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This announcement provides key updates regarding Problem 2 of Homework #9, specifically outlining that A = 10^-7 cm². The Term Project will be available online today, with a submission deadline set for Friday, April 27. Students are encouraged to collaborate with one partner. The lecture will focus on the PNPN thyristor, exploring the operation and modeling of Silicon Controlled Rectifiers (SCR). Essential concepts from Chapter 13 lectures will be covered to enhance understanding of high-power switching applications, conduction states, and the SCR's regenerative effect.
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ANNOUNCEMENTS For Problem 2 of HW#9, use A = 10-7 cm2 The Term Project will be posted online today Due on Friday, April 27 You may work with one partner OUTLINE The PNPN thyristor Reading: Chapter 13 Lecture #28 EE130 Lecture 28, Slide 1
The Silicon Controlled Rectifier (Thyristor) • The SCR is a PNPN device • Used in high-power switching applications EE130 Lecture 28, Slide 2
SCR Operation • The SCR can be modeled as 2 interconnected BJTs EE130 Lecture 28, Slide 3
Few holes injected into N region Thermal R-G current only Forward blocking state EE130 Lecture 28, Slide 4
Holes injected into N Due to wide N-P depletion region, holes are swept into P, turning on PNP device This turns on NPN device This regenerative effect maintains conduction even at low voltage, down to a minimum “holding current”. Conducting State EE130 Lecture 28, Slide 5
We can write: Normally, (a1+a2) <1 However, as VAK, base width narrowing causes (a1+a2) 1, IAK Quantitative Analysis EE130 Lecture 28, Slide 6